在单晶Si (100)基体上,采用闭合场非平衡磁控溅射方法沉积制备了导电非晶碳膜.X射线衍射(XRD)分析表明薄膜呈明显的非晶结构；用XPS分析了薄膜中的碳键结构,碳膜的C1s峰位于284～285 eV之间,Cls峰分峰拟舍得出sp2C的原子数分数为59％左右,碳键以sp2结构为主；四探针法测得薄膜的电阻率为1.32×10-6Ω·m.可以认为:制备的碳膜是以sp2结构为主的类石墨非晶态薄膜.
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