在硫酸铜电解液中加入硫酸钠,利用电沉积和X-射线衍射方法研究了不同提纯铜工艺制备的铜镀层及织构特征.结果表明,织构度受到电流密度、镀层厚度和温度的影响,在较小的电流密度、较高温度及在较薄厚度的铜镀层得到(111)晶面择优取向,在较高的电流密度及在镀层δ达到30μm时得到(220)晶面择优取向,而且铜镀层(220)晶面比(111)晶面更易保留,(220)晶面使纯铜能获得更好的电化学性能,保持纯铜晶面的择优取向对铜在半导体的应用产生了深远的影响.
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