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钙钛矿型铁电薄膜由于在非易失存储器方面的应用而受到广泛研究,但疲劳问题是影响其应用的主要障碍.简要综述了近年来国外在钙钛矿型铁电薄膜疲劳机制和消除疲劳措施等方面的研究进展.

参考文献

[1] J Chen et al.[J].Journal of Applied Physics,1994,76(09):5394-5398.
[2] J F Scott et al.[J].Science,1989,246:1400-1405.
[3] J Carrano et al.[J].IEEE Transactions on Sonics and Ultrasonics,1991,38(06):690-702.
[4] W L Warren et al.[J].Applied Physics Letters,1994,65(08):1018-1020.
[5] H OKINO et al.[J].Journal of Applied Physics,1998,37:5137-40.
[6] C A-Paz de Araujo et al.[J].NATURE,1995,374:627-629.
[7] Du XF.;Chen IW. .Fatigue of Pb(Zr0.53Ti0.47)O-3 ferroelectric thin films[J].Journal of Applied Physics,1998(12):7789-7798.
[8] O Auciello .[J].Integrated Ferroelectrics,1997,15:211-220.
[9] C R LI et al.[J].Journal of Materials Science,1998,33:1783-1787.
[10] Kato K.;Finder JM.;Dey SK.;Torii Y.;Zheng C. .Sol-gel route to ferroelectric layer-structured perovskite SrBi2Ta2O9 and SrBi2Nb2O9 thin films[J].Journal of the American Ceramic Society,1998(7):1869-1875.
[11] Tsai Huei-Mei;Lin Pang;Tseng Tseung-Yuen .Effect of bismuth content on the properties of Sr_(0.8)Bi_xTa_(1.2)Nb_(0.9)O< sub>9+y ferroelectric thin films[J].Journal of Applied Physics,1999(2):1095-0.
[12] H FUJISAWA;M YOSHIDA;M SHIMIZU;H NIU .Influence of purity source precursors on the electrical properties of Pb(Zr,Ti)O3 thin films prepared by metalorganic chemical vapor deposition[J].Japanese Journal of Applied Physics,1998,37:5132-36.
[13] W-J Lin et al.[J].Journal of the American Ceramic Society,1997,80(05):1065-1072.
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