电偶腐蚀法制备多孔硅的研究

材料工程, 2006, (11): 45-52. doi: 10.3969/j.issn.1001-4381.2006.11.010

电偶腐蚀法制备多孔硅的研究

房振乾 ^1, , 胡明 ^2, , 窦雁巍 ^3, , 宗杨 ^4, , 梁继然 ^5,

1.天津大学,电子信息工程学院,天津,300072

2.天津大学,电子信息工程学院,天津,300072

3.天津大学,电子信息工程学院,天津,300072

4.天津大学,电子信息工程学院,天津,300072

5.天津大学,电子信息工程学院,天津,300072

基金项目: 国家自然科学基金(60371030;60071027) 天津市自然科学基金(023603811)

关键词：多孔硅 , 电偶腐蚀法 , 腐蚀条件 , 厚度 , 表面形貌

Study of Porous Silicon Prepared by Galvanic Corrosion Method

用电偶腐蚀法制备多孔硅,主要研究了铂电极的优化制备工艺以及腐蚀条件对多孔硅厚度的影响,并且结合SEM,AFM等测试手段对所制备的多孔硅的表面形貌进行了分析.实验发现,在相同的腐蚀条件下,多孔硅的厚度随铂电极的厚度以及铂电极与腐蚀硅片的面积比的增大而增大.

参考文献

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电偶腐蚀法制备多孔硅的研究

Study of Porous Silicon Prepared by Galvanic Corrosion Method

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