采用磁控溅射法制备Ni-Mn-Ga磁性形状记忆合金薄膜,并将制备薄膜在不同的温度下进行真空热处理.研究了不同工艺条件下制备薄膜的结构、形貌和磁性.结果表明:采用磁控溅射在单晶Si基底上溅射Ni-Mn-Ga磁性形状记忆合金薄膜,主要为沿基底法线方向的柱状晶结构,随着热处理温度提高,薄膜晶化程度提高,沉积在Cu基底上的薄膜磁性优于沉积在Si基底上薄膜的磁性.
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