在氩气中,以纳米SiO2、炭黑为原料,金属镁粉为还原剂,在NaCl,KCl等熔盐中发生还原反应及硅碳反应制备出SiC粉体.研究了温度、熔盐的种类等条件对合成SiC粉体的影响.通过X衍射分析仪、场发射扫描电镜、激光粒度仪、比表面积分析仪等对合成的SiC粉体进行了表征.结聚表明,800℃时已有SiC粉体生成；选用KCl为熔盐在1000℃时合成了D50为1.057 μm,比表面积54.88m2/g的高纯SiC粉体.
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