采用溶胶-凝胶法在多孔氮化硅表面制备了CaO-B2O3-SiO2(简称为CBS)微晶玻璃致密涂层.用高Q腔一腔多模扫频方法测量了样品从7.3GHz至18.4GHz频率范围内室温到1200℃的介电常数和介电损耗,研究了CBS涂层对多孔氮化硅高温高频介电性能的影响.结果表明:多孔氮化硅经表面处理后的介电常数略有增大,随着频率增大介电损耗的波动减小;9.2GHz典型频率下,样品介电常数的温度系数增大;室温下介电损耗降低了60%以上;表面处理改善了介电损耗的温度稳定性,满足高温宽频天线罩透波性能要求.
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