采用快速等离子烧结法(SPS)制得纯相BiFeO3靶材,利用脉冲激光沉积(PLD)法将其沉积在Si(100)衬底上,制得BiFeO3薄膜.通过调节各种工艺参数,在沉积温度650℃,氧压2Pa,靶基距5cm,脉冲激光频率7Hz、激光能量350mJ条件下获得了高择优取向、高结晶度的BiFeO3薄膜.在此工艺条件下,又制备了不同厚度的BiFeO3薄膜.用XRD、SEM等手段对薄膜相和形貌进行了表征.结果表明,制备的薄膜有较高的形貌质量,薄膜的铁电、铁磁性能呈现出与厚度的强相关性；其中300nm厚的薄膜质量最好.
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