NiFeCr种子层可以明显降低NiFe薄膜的低频噪声,提高信噪比.制备态下NiFeCr为种子层的NiFe薄膜的低频噪声比以Ta打底的NiFe薄膜的低频噪声下降10倍,250℃下保温2h退火后以Ta打底的NiFe薄膜的低频噪声因扩散而明显上升,而NiFeCr为种子层的NiFe薄膜的低频噪声则有小幅下降.电镜分析表明NiFeCr种子层与NiFe层形成良好的晶格匹配关系,可以基本实现NiFe完全外延式的生长.
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