采用碳热还原-氧化法成功制备大小均匀的MgO纳米线,采用场致发射电子显微镜(FESEM)和X射线衍射(XRD)表征其形貌及晶体结构.采用丝网印刷将MgO纳米线转移到阴极电极,并将阴极电极与印刷有荧光粉的阳极电极组装成二级场致发射器件.场致电子发射测试表明MgO纳米线具有较好的电子发射特性:其阈值电场强度仅为3.82V/μm(1mA/cm2),最高电流密度达到2.68mA/cm2(4.01V/μm),发光亮度为1152cd/m2,4h内没有明显的衰减.MgO有望作为冷阴极材料在场致发射器件上得到应用.
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