利用拉曼光谱结合 XRD与 SEM测试对未掺杂与Ag掺杂的 In2 S3薄膜进行了分析研究。XRD测试结果确定了 In2 S3的物相，并表明掺杂后晶粒尺寸发生一定的变化；拉曼光谱研究表明，掺杂后232、272及300cm-13条拉曼谱线发生红移，这是由于掺杂后晶格膨胀引起的。结合部分拉曼谱线半高宽的展宽证实了掺杂后薄膜中存在间隙 Ag 原子；SEM的测试结果进一步证实Ag掺杂后In2 S3晶格存在膨胀，并说明了In2 S3薄膜的生长方式。
The characteristics of undoped and silver doped In2 S3 films were studied via Raman spectroscopy,X-ray diffraction and scanning electron microscope.The phase of In2 S3 films was identified by XRD which showed the change of grain size after silver doped.As the films doped with silver,the red shift of Raman bands (232, 272 and 300cm-1 )of In2 S3 films took place.The broadening of linewidths (FWHM)of some Raman bands in-dicated the exist of interstitial silver ions.The SEM pictures showed the growth pattern and the larger grain size of In2 S3∶Ag films.
参考文献
| [1] | Bhira L.;Belgacem S.;Couturier G.;Salardenne J.;Barreaux N.;Bernede JC.;Essaidi H. .Structural and photoelectrical properties of sprayed beta-In2S3 thin films[J].Physica Status Solidi, A. Applied Research,2000(2):427-435. |
| [2] | Jayakrishnan R;John R;Kartha C S et al.Defect analy-sis of sprayed beta-In2 S3 thin films using photolumines-cence studies[J].Semicond Sci and Technol,2005,20(12):1162-1167. |
| [3] | Lianos P;Thomas J K .Cadmium sulfide of small dimen-sions produced in inverted micelles[J].Materials Science Forum,1988,125(03):299-302. |
| [4] | Bayon R;Maffiotte C;Herrero J .Chemical bath deposi-tion of indium hydroxy sulphide thin films:process and XPS characterization[J].THIN SOLID FILMS,1999,340(26):18-23. |
| [5] | El Shazly AA.;Metwally HS.;Seyam MAM.;Abd Elhady D. .Electrical properties of beta-In2S3 thin films[J].Journal of Physics. Condensed Matter,1998(26):5943-5954. |
| [6] | Ihara H;Abe H;Endo S et al.Valence band densities of states of CdIn2 S4 and In2 S3 from X-ray photoelectron spectroscopy[J].Solid State communications,1978,28(07):563-565. |
| [7] | Turan, E.;Zor, M.;Kul, M.;Aybek, A.S.;Taskopru, T. .α-In _2S _3 and β-In _2S _3 phases produced by SILAR technique[J].Philosophical magazine: structure and properties of condensed matter,2012(13/15):1716-1726. |
| [8] | Sáez-Araoz R;Krammer J .ILGAR In2 S3 buffer layers for Cd-free Cu(In,Ga)(S,Se)2 solar cells with certified effi-ciencies above 1 6%[J].Progress in Photovoltaics:Re-search and Applications,2012,20(07):855-861. |
| [9] | 吴晓昆,杨宇,吴兴惠.Ranlan测量Ge/Si多层膜中Ge晶粒尺寸的理论研究[J].红外技术,2001(01):15-18. |
| [10] | Goodyear J;Steigmann G A .Twinning in a cation-defi-cient spinel structure[J].Proceedings of the Physical Society,1961,78(04):491-495. |
| [11] | Becker R S;Zheng T;Elton J et al.Synthesis and pho-toelectrochemistry of In2 S3[J].Solar Energy Materials,1986,13(02):97-107. |
| [12] | Spyridelis K J;Balkanski M .Far infrared and Raman op-tical study of beta-In2 S3 and beta-In2 S3 compounds[J].Laboratory of Physics A,1981,105(01):291-296. |
| [13] | Gasanly N.M.;Aydinli A.;Yilmaz I.;Ozkan H. .Temperature dependence of the Raman-active phonon frequencies in indium sulfide[J].Solid State Communications,1999(4):231-236. |
| [14] | Repkova M;Nemec P;Frumar M .Structure and thermal properties of Ge-In-S chalcogenide glasses[J].Journal of optoelectronics and advanced materials,2006(5):1796-1800. |
| [15] | MAO Shun;TAO Haizheng;ZHAO Xiujian .Microstructure and Thermal Properties of the GeS_2-In_2S_3-CsI Glasses[J].Journal of Wuhan University of Technology.Materials Science edition,2006(1):106-109. |
| [16] | 黄焱球,刘梅冬,李珍,曾亦可.氧化锌薄膜的拉曼光谱研究[J].功能材料,2002(06):653-655. |
| [17] | 倪赛力,常永勤,多永正,张寅虎,龙毅,强文江,叶荣昌.Mn掺杂ZnO纳米线的拉曼散射和光致发光特性[J].功能材料,2007(08):1380-1382. |
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