主要研究了Pr掺杂对 Zn-Bi 系压敏电阻的性能的影响。当Pr6 O11掺杂量为5.49%(质量分数)，烧成温度为1150℃时，压敏电压达到400 V/mm；当Pr6 O11掺杂量为3.37%(质量分数)，烧成温度为1200℃时，非线性系数达到48。研究还发现 Pr-Y 共掺杂能显著地提高 Zn-Bi 系压敏电阻的压敏电压，但会对体系的非线性系数和漏电流产生不利影响。
In this article,we mainly studied the effects of Pr doping Zn-Bi system on its properties.The results show that when the sintering temperature was 1150 ℃ and the dopant of Pr6 O11 was 5.49wt%,the varistor voltage got 400 V/mm;and when the temperature was 1200 ℃ and 3.37wt% Pr6 O11 doping,the nonlinear co-efficient got 48.Study also find that the co-doping of Pr-Y can significantly improve the varistor voltage of Zn-Bi system,but it has the adverse effects on the nonlinear coefficient and leakage current.
参考文献
| [1] | M. A. Ponce;M. A. Ramirez;R. Parra;C. Malagu;M. S. Castro;P. R. Bueno;J. A. Varela .Influence of degradation on the electrical conduction process in ZnO and SnO_(2)-based varistors[J].Journal of Applied Physics,2010(7):074505-1-074505-6. |
| [2] | Jianying Li;Shaohua Luo;M.A. Alim .The role of TiO_2 powder on the SrTiO_3-based synthesized varistor materials[J].Materials Letters,2006(6):720-724. |
| [3] | Hyodo T.;Wada K.;Shimizu Y.;Egashira M.;Baba Y. .Hydrogen sensing properties of SnO2 varistors loaded with SiO2 by surface chemical modification with diethoxydimethylsilane[J].Sensors and Actuators, B. Chemical,2000(1/3):175-181. |
| [4] | Kutty T R N;Sam Philip .Low voltage varistors based on SrTiO3 ceramics[J].Materials Science and Engineering B,1995,33(2-3):58-66. |
| [5] | Mahan G D;Levinson Lionel M;Philipp H R .Theory of conduction in ZnO varistors[J].Journal of Applied Phys-ics,1979,50(4):2799-2812. |
| [6] | Olsson E;Falk L K L;Dunlop G L et al.The micro-structure of a ZnO varistor material[J].Journal of Mate-rials Science,1985,20(11):4091-4098. |
| [7] | Hower P L;Gupta T K .A barrier model for ZnO varis-tors[J].Journal of Applied Physics,1979,50(7):4847-4855. |
| [8] | 张兆生,卢振亚.TiO2和MgO掺杂的ZnO导电陶瓷材料[J].功能材料,2009(09):1455-1457,1460. |
| [9] | Pike G E;Kurtz S R;Gourley P L et al.Electrolumi-nescence in ZnO varistors:Evidence for hole contribu-tions to the breakdown mechanism[J].Journal of Applied Physics,1985,57(12):5512-5518. |
| [10] | Mahan G D .Intrinsic defects in ZnO varistors[J].Jour-nal of Applied Physics,1983,54(7):3825-3832. |
| [11] | Akinori Tanaka;Kazuo Mukae .ICTS measurements of single grain boundaries in ZnO: rare-earth varistor[J].Journal of electroceramics,1999(1 Suppl.):55-59. |
| [12] | Asokan T .Grain boundary properties of hot pressed zinc oxide varistors[J].Materials Research Bulletin,1993,28(12):1277-1284. |
| [13] | Hingorani S;Pillai V;Kumar P et al.Microemulsion mediated synthesis of zinc-oxide nanoparticles for varis-tor studies[J].Materials Research Bulletin,1993,28(12):1303-1310. |
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