简要介绍了巨磁电阻材料和隧穿磁电阻材料的基本结构和性能，概述了自旋传感芯片、自旋磁电信号耦合芯片及存储芯片等几类相关自旋电子芯片的工作原理和器件性能，以及它们的应用前景。此外，也对在国内实现自旋电子芯片的产业化提出了自己的观点。
GMR/TMR materials are firstly introduced,and then the related devices including spintronic sensors, isolators and magnetic random access memory (MRAM)are reviewed from a perspective of materials,design, functionalities as well as device applications.Furthermore,the suggestions are given on how to commercialize spintronic devices.
参考文献
| [1] | Baibich M N;Broto J M;Fert A et al.Giant magneto-resistance of(001)Fe/(001)Cr magnetic superlattices[J].Physical Review Letters,1988,61(21):2472-2475. |
| [2] | Binasch G;Grünberg P;Saurenbach F et al.Enhanced magnetoresistance in layered magnetic structures with an-tiferromagnetic interlayer exchange[J].Physical Review B,1989,39:4828-4830. |
| [3] | Youwei Du .Importance of spintronics and the relevant device commercialization[J].Information of Functional Materials,2011,8(03):9-14. |
| [4] | Nobelprize .Org 2012 The Nobel Prize in Physics 2007[OL].www.nobelprize.Org/nobel _ prizes/physics/laureates/2007 |
| [5] | Parkin S S P;More N;Roche K P .Oscillations in ex-change coupling and magnetoresistance in metallic super-lattice structures:Co/Ru,Co/Cr,and Fe/Cr[J].Physi-cal Review Letters,1990,64(19):2304-2307. |
| [6] | Dieny B;Speriosu V S;Parkin S S P et al.Giant mag-netoresistive in soft ferromagnetic multilayers[J].Physi-cal Review B,1991,43(01):1297-1300. |
| [7] | Moodera J S;Kinder L R;Wong T M et al.Large mag-netoresistance at room temperature in ferromagnetic thin film tunnel junctions[J].Physical Review Letters,1995,74(16):3273-3276. |
| [8] | Miyazaki T;Tezuka N .Giant magnetic tunneling effect in Fe/Al2 O3/Fe junction[J].Journal of Magnetism and Magnetic Materials,1995,139(03):L231-L234. |
| [9] | Tanaka A.;Shimizu Y. .Top, bottom, and dual spin valve recording heads with PdPtMn antiferromagnets[J].IEEE Transactions on Magnetics,1999(2):700-705. |
| [10] | Egelhoff WF.;Powell CJ.;Stiles MD.;Mcmichael RD.;Lin CL. Sivertsen JM.;Judy JH.;Takano K.;Berkowitz AE.;Anthony TC.;Brug JA.;Chen PJ. .OPTIMIZING THE GIANT MAGNETORESISTANCE OF SYMMETRIC AND BOTTOM SPIN VALVES[J].Journal of Applied Physics,1996(8 Pt.2a):5277-5281. |
| [11] | Fuke HN.;Kamiguchi Y.;Iwasaki H.;Sahashi M.;Saito K. .SPIN-VALVE GIANT MAGNETORESISTIVE FILMS WITH ANTIFERROMAGNETIC IR-MN LAYERS[J].Journal of Applied Physics,1997(8 Pt.2a):4004-4006. |
| [12] | Zheonghong Qian;Dexin Wang;Jim M. Daughton;Mark Tondra;Cathy Nordman;Anthony Popple .Linear Spin-Valve Bridge Sensing Devices[J].IEEE Transactions on Magnetics,2004(4):2643-2645. |
| [13] | 白茹,钱正洪,李健平,孙宇澄,朱华辰,李领伟,李源,霍德璇,彭英姿.CrPtMn顶钉扎自旋阀材料的交换耦合作用研究[J].无机材料学报,2013(09):977-981. |
| [14] | Ching Tsang;Fontana R.E. .Design, fabrication and testing of spin-valve read heads for high density recording[J].IEEE Transactions on Magnetics,1994(6):3801-3806. |
| [15] | Heim D.E.;Fontana R.E. Jr. .Design and operation of spin valve sensors[J].IEEE Transactions on Magnetics,1994(2):316-321. |
| [16] | 钱正洪,白茹,黄春奎,吴建得.先进磁电子材料和器件[J].仪表技术与传感器,2009(z1):96-101. |
| [17] | Dexin Wang;Cathy Nordman;James M. Daughton;Zhenghong Qian;Jonathon Fink .70% TMR at Room Temperature for SDT Sandwich Junctions With CoFeB as Free and Reference Layers[J].IEEE Transactions on Magnetics,2004(4):2269-2271. |
| [18] | Djayaprawira DD;Tsunekawa K;Nagai M;Maehara H;Yamagata S;Watanabe N;Yuasa S;Suzuki Y;Ando K .230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions[J].Applied physics letters,2005(9):2502-1-2502-3-0. |
| [19] | J. Hayakawa;S. Ikeda;Y. M. Lee;F. Matsukura;H. Ohno .Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions[J].Applied physics letters,2006(23):232510-1-232510-3-0. |
| [20] | Ikeda S;Hayakawa J;Ashizawa Y et al.Tunnel mag-netoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves an-nealed at high temperature[J].Applied Physics Letters,2008,93(08):082508-082508-3. |
| [21] | Cai Jianwang .Theory and application of spintronic de-vices[J].Progress in Physics,2006,26:180-227. |
| [22] | Jiang Yong .Experimental research on spin momentum transfer effect[J].Progress in Physics,2008,28:215-222. |
| [23] | HAN XiuFeng,ALI Syed Shahbaz,LIANG ShiHeng.MgO(001) barrier based magnetic tunnel junctions and their device applications[J].中国科学:物理学 力学 天文学（英文版）,2013(01):29-60. |
| [24] | Zhai Hongru;Du Youwei.Spintronics[M].北京:科学出版社,2013 |
| [25] | Daughton J.M.;Chen Y.J. .GMR materials for low field applications[J].IEEE Transactions on Magnetics,1993(6):2705-2710. |
| [26] | Daughton J.;Brown J. .Magnetic field sensors using GMR multilayer[J].IEEE Transactions on Magnetics,1994(6):4608-4610. |
| [27] | Tondra M;Jander A;Nordman C A.Three-axis magnetometers using spin-dependent tunneling:reduced size and power[A].,2003:208-213. |
| [28] | Daughton JM. .GMR and SDT sensor applications[J].IEEE Transactions on Magnetics,2000(5 Pt.1):2773-2778. |
| [29] | Fayfield R T;Hazelton T;Popple T et al.Industry Microelectronics Symposium[R].NJ:Proceedings of the Thirteenth Biennial University/Government,1999. |
| [30] | Magnetoresistive signal isolators employing linear spin-valve sensing resistors[J].Journal of Applied Physics,2003(10):6870-6872. |
| [31] | B. N. Engel;J. Akerman;B. Butcher;R. W. Dave;M. DeHerrera;M. Durlam;G. Grynkewich;J. Janesky;S. V. Pietambaram;N. D. Rizzo;J. M. Slaughter;K. Smith;J. J. Sun;S. Tehrani .A 4-Mb Toggle MRAM Based on a Novel Bit and Switching Method[J].IEEE Transactions on Magnetics,2005(1):132-136. |
| [32] | MRAM Producs[OL].http://www.everspin.com/PDF/MSG-14349_MRAM_Sales_Bro.pdf |
| [33] | Everspin debuts first Spin-Torque MRAM for high per-formance storage systems[OL].http://www.everspin.com/PDF/ST-MRAM_Press_Release.pdf |
| [34] | Advances and Future Prospects of Spin-Transfer Torque Random Access Memory[J].IEEE Transactions on Magnetics,2010(6):1873. |
| [35] | Slaughter J M;Rizzo N D;Janesky J.High densi-ty ST-MRAM technology[A].IEEE,2012:29.3.1-29.3.4. |
| [36] | Mangin S;Ravelosona D;Katine JA;Carey MJ;Terris BD;Fullerton EE .Current-induced magnetization reversal in nanopillars with perpendicular anisotropy[J].Nature materials,2006(3):210-215. |
| [37] | Hao Meng;Jian-Ping Wang .Spin transfer in nanomagnetic devices with perpendicular anisotropy[J].Applied physics letters,2006(17):172506-1-172506-3-0. |
| [38] | Kishi T;Yoda H;Kai T.Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM[A].IEEE,2008:1-4. |
| [39] | Ikeda S;Miura K;Yamamoto H et al.A perpendicu-lar-anisotropy CoFeB-MgO magnetic tunnel j unction[J].Nature Materials,2010,9(09):721-724. |
| [40] | Parkin SS;Hayashi M;Thomas L .Magnetic domain-wall racetrack memory.[J].Science,2008(5873):190-194. |
| [41] | Thomas L;Jose S;Yang S H.Racetrack memo-ry:a high performance,low-cost,non-volatile memory based on magnetic domain walls[A].,2011:24.2.1-24.2.4. |
| [42] | Annunziata A J;Gaidis M C;Thomas L.Race-track memory cell array with integrated magnetic tunnel j unction readout[A].,2011:24.3.1-24.3.4. |
| [43] | Kiselev S I;Sankey J C;Krivorotov I N et al.Micro-wave oscillations of a nanomagnet driven by a spin-polar-ized current[J].NATURE,2003,425(6956):380-383. |
| [44] | W. H. Rippard;M. R. Pufall;S. Kaka;S. E. Russek;T. J. Silva .Direct-Current Induced Dynamics in Co_(90)Fe_(10)/Ni_(80)Fe_(20) Point Contacts[J].Physical review letters,2004(2):027201.1-027201.4. |
| [45] | Kiselev S I;Sankey J C;Krivorotov I N et al.Micro-wave oscillations of a nanomagnet driven by a spin-polar-ized current[J].NATURE,2003,425(6956):380-383. |
| [46] | Pribiag VS;Krivorotov IN;Fuchs GD;Braganca PM;Ozatay O;Sankey JC;Ralph DC;Buhrman RA .Magnetic vortex oscillator driven by d.c. spin-polarized current[J].Nature physics,2007(7):498-503. |
| [47] | Ruotolo, A;Cros, V;Georges, B;Dussaux, A;Grollier, J;Deranlot, C;Guillemet, R;Bouzehouane, K;Fusil, S;Fert, A .Phase-locking of magnetic vortices mediated by antivortices[J].Nature nanotechnology,2009(8):528-532. |
| [48] | Kaka S;Pufall M R;Rippard W H et al.Mutual phase-locking of microwave spin torque nano-oscillators[J].NATURE,2005,437(7057):389-392. |
| [49] | Deac AM;Fukushima A;Kubota H;Maehara H;Suzuki Y;Yuasa S;Nagamine Y;Tsunekawa K;Djayaprawira DD;Watanabe N .Bias-driven high-power microwave emission from MgO-based tunnel magnetoresistance devices[J].Nature physics,2008(10):803-809. |
| [50] | Moriyama, T.;Finocchio, G.;Carpentieri, M.;Azzerboni, B.;Ralph, D.C.;Buhrman, R.A. .Phase locking and frequency doubling in spin-transfer-torque oscillators with two coupled free layers[J].Physical review, B. Condensed matter and materials physics,2012(6):060411-1-060411-5. |
| [51] | Monsma D J;Lodder J C;Popma T J A et al.Perpen-dicular hot electron spin-valve effect in a new magnetic field sensor:the spin-valve transistor[J].Physical Re-view Letters,1995,74(26):5260. |
| [52] | Satoshi Sugahara;Masaaki Tanaka .A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain[J].Applied physics letters,2004(13):2307-2309. |
| [53] | SATOSHI SUGAHARA;JUNSAKU NITTA .Spin-Transistor Electronics: An Overview and Outlook[J].Proceedings of the IEEE,2010(12):2124-2154. |
| [54] | Wang B;Wang J;Guo H .Quantum spin field effect transistor[J].Physical Review B,2003,67(09):092408. |
| [55] | Y. G. Semenov;K. W. Kim;J. M. Zavada .Spin field effect transistor with a graphene channel[J].Applied physics letters,2007(15):153105-1-153105-3-0. |
| [56] | Ian Appelbaum;Douwe J. Monsma .Transit-time spin field-effect transistor[J].Applied physics letters,2007(26):262501-1-262501-3-0. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%