在SOI基上制备光电纳米器件具有良好的光电集成应用前景,通过铜膜生长法在 SOI 基上制备了形貌为类针状的 Cu(OH)2前驱体纳米线,并采用热处理法600℃条件下成功制备了 CuO 纳米线。通过扫描电镜(SEM)、透射电镜(TEM)、X 射线衍射测试(XRD)对样品结构、形貌进行了表征。 SEM、TEM测试结果表明,Cu(OH)2前驱体纳米线结构一致,尺寸均匀,表面光滑。在 Cu(OH)2前驱体纳米线上二次生长的CuO 纳米线具有类蒲草状细长光滑的结构, CuO纳米线直径约为80~100 nm,长度约为10μm, CuO 纳米线结晶性良好。
Preparation of optoelectronic nanodevices on SOI substrate has good prospects in optoelectronic inte-grated applications.CuO nanowires have been successfully prepared on the SOI substrate at 600 ℃ by the heat treatment method of Cu(OH)2 precursors nanowires,which were pre-prepared by the copper film growth meth-od.Morphology and structures of the samples were characterized by scanning electron microscope (SEM), transmission electron microscopy (TEM),and X-ray diffraction (XRD).The SEM and TEM testing results showed that Cu(OH)2 precursors nanowires were needle-like with consistent structure and smooth and uniform surface.The CuO nanowires were cattail-like with tenuous and smooth structure.The diameter of CuO nanowires was about 80-100 nm,the length of nanowires was about 10μm.A good crystalline quality of CuO nanowires were obtained.
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