于不同射频功率下制备出非晶 Si 膜并对其进行真空退火处理，采用 XRD、TEM和少子寿命测试仪等检测手段分析了退火前后薄膜的微观结构及电学性能。研究发现，随着射频功率的增加，薄膜的中程有序度和少子寿命均呈先增后减的趋势。经真空退火处理后，非晶硅膜得以晶化，少子寿命较退火前有大幅提高；另外，退火后薄膜的晶化率和少子寿命随射频功率的变化趋势与退火前一致，说明同一热力学条件下薄膜的中程有序度越高越容易发生晶化。
A series of amorphous silicon thin films with different order degree had been obtained by PECVD through adj usting RF power firstly and then annealed in vacuum.The microstructure and electrical property of the films had been investigated by XRD,Raman,HRTEM and the mi-nority carrier lifetime tester.With the in-crease of RF power,the order degree and the minority car-rier lifetime increase first and then decrease.After annealing,all of the films were crystalline and both of the crystallinity and grain size increase first and then de-crease with RF power.At the same time,the minority carrier lifetime had a significant improvement comparing with that before annealing.The results indicated that in the same condition of thermodynamics,the films with higher order de-gree are easier to crystallize.
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