利用磁控溅射法成功制备了 V 掺杂Cu3 N薄膜.XRD 显示随着 V 掺入浓度的升高,薄膜的择优生长取向由(111)面向(100)面转变.SEM 结果表明向Cu3 N薄膜中掺入 V,薄膜的晶体颗粒形态发生了变化.从对薄膜样品进行的光反射率、电阻率和显微硬度测试结果可以看出,薄膜中掺入适当浓度 V 对其光吸收、导电性和力学性能有一定程度的改善.
V-doped Cu3 N films were prepared successfully by magnetron sputtering under the experiment condi-tion.XRD shows that the Cu3 N film growth prefers direction by changing from (1 1 1)to (100)direction with increasing the content of V.SEM shows that the grains’shape of Cu3 N crystals has been changed by inserting V atoms into the film.Moreover,the optical absorption,electric conduction and mechanical property of the Cu3 N films have been better by doping V to the films.
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