采用水热法制备了不同掺杂浓度的 WO 3∶Ti 纳米晶粒,并在350℃下退火1 h.采用 SEM、XRD 表征了材料的形貌与结构,并测试了用退火前后合成材料制成的薄膜气敏传感器件在200℃下对NO 2的气敏性能.结果表明,Ti 掺杂可以有效抑制WO 3晶粒的生长,减小晶粒尺寸；退火处理使材料的晶相发生了改变,晶粒尺寸进一步减小,晶粒分散性变好.薄膜传感器件的测试结果显示,适量 Ti 掺杂和退火处理均可提高器件对 NO 2的灵敏度,退火后 Ti 掺杂2％样品制成的器件的灵敏度最大,其值达到了15．38,响应恢复时间分别为2．2和1．5 min,且具有良好的可重复性和稳定性.
Ti-doped WO 3 nanocrystals with different Ti-doped concentrations are synthesized by hydrothermal method,and annealed at 350 ℃ for 1 h.Morphology and structure of these materials have been characterized by the scanning electron microscopy and X-ray diffraction instrument,the gas-sensing properties to nitrogen diox-ide at 200 ℃ of film sensors made of the unannealed and annealed materials are studied.The results show that Ti-doped can effectively inhibit the growth of nanocrystals,reduce the size of nanocrystals;the crystalline phase of these materials have changed after annealed,the size of nanocrystals is further reduced,the dispersion of nanocrystals becomes better.The tests of the film sensors show that the amount of Ti-doped and annealing can improve the sensitivity of sensors to NO 2 ,the film sensor made of the annealed Ti-doped for 2% has a maxi-mum sensitivity of 15.38 and a good reproducibility and stability,the response and recovery time is 2.2 and 1.5 min,respectively.
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