通过Mn离子注入 Mg 掺杂 GaN 外延层制备了铁磁性 GaN∶Mn 薄膜,利用拉曼散射和光致发光谱研究了退火温度对薄膜微结构和光学特性的影响。拉曼谱测试显示由离子注入相关缺陷引起了新的声子模,分析认为Mn离子相关的局域振动(LVM)紧邻 Ehigh2峰。光致发光谱观察到位于1．69,2．54和2．96 eV的3个新的发光峰,分析认为2．96 eV 的发光峰来自MgGa-VN 复合体深施主能级和 Mg 的浅受主能级之间的辐射复合跃迁,2．54 eV的发光峰来自浅施主能级和深受主能级之间的辐射复合跃迁,对于位于1．69 eV的新发光峰不排除来自MgGa-VN 复合体深施主能级和Mn相关深受主能级之间辐射复合跃迁的贡献。
Ferromagnetic GaN∶Mn thin films were prepared by implementing Mn ions into Mg-doped GaN epi-layer.The implanted samples were examined with both Raman scattering and photoluminescence (PL)meas-urements to characterize their microstructure property.The Raman spectra exhibit additional excitations attrib-uted to the vibrational mode of defects caused by Mn-ion implantation and the Mn related local vibrational mode in the vicinity of Ehigh2 .The results of PL measurement show that new peaks at 1.69,2.54 and 2.96 eV emerge. The PL peak at 2.96 eV was attributed to a deep MgGa-VN complexes donor-shallow Mg acceptor transition,the PL peak at 2.54 eV was attributed to a shallow donor-deep acceptor transition,and the PL peak at 1.69 eV may be due to a transition between MgGa-VN complexes donor level and Mn acceptor level.
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