采用 HWCVD 法双面沉积 a-Si∶H 膜钝化n-Cz-Si 片表面,利用光谱型椭偏测试仪和傅里叶红外光谱仪研究沉积气压、电流和热丝衬底间距对 a-Si∶H 薄膜结构及钝化性能的影响.结果表明,(1)薄膜中SiH 2键相对 SiH 键含量随气压升高逐渐减少,随电流增大先减少后增大；(2)热丝衬底间距4．0 cm 相比7．5 cm沉积的 a-Si∶ H 薄膜微观结构中,SiH 2键相比SiH 键的比例更高,钝化效果也更好；(3)本文范围内,工艺参数分别为热丝衬底间距4．0 cm 时气压1．5 Pa,沉积电流21．5 A 情况下钝化效果最优,钝化后硅片的表面复合速率为2．9 cm/s.
Bifacial-deposited a-Si ∶ H films were made on n-Cz-Si with different processing parameters by HWCVD,the structure and the passivation effect of a-Si∶H films were analyzed by spectroscopic ellipsometry (SE)and Fourier Transform Infrared Spectroscopy(FT-IR)with different depositing pressure,current,and distance between filament and substrate.The results show that:(1 )Relative content of SiH 2 to SiH bond in films decreases with the pressure increasing,but decreases firstly then increases with current increasing;(2) Compare to 7.5 cm of distance between filament and substrate,the samples of 4.0 cm,proportion of the SiH 2 bond compare to SiH bond is higher,passivation effect is better;(3)Within the scope of this study,the passi-vation effect is optimal with pressure 1.5 Pa,current 21.5 A,distance 7.5 cm,surface recombination velocity 2.9 cm/s.
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