欢迎登录材料期刊网

材料期刊网

高级检索

在旋涂法制成的种子层基底上,用水热法生长氧化锌纳米阵列(ZNAs)和掺锡氧化锌纳米阵列(ZNAs∶Sn).为了研究掺锡对氧化锌纳米阵列透光性的影响,用 X 射线衍射(XRD)、扫描电镜(SEM)、透射谱和椭圆偏振仪(SE)对样品进行了表征,并结合等效介质模型(EMA)理论模拟样品光学常数,根据太阳能光谱 AM1.5计算透过光的总功率.XRD 分析表明纳米棒垂直于基底沿(002)晶向生长,SEM 和椭圆偏振仪表明样品表面形貌良好,制得的纳米棒直径约300 nm,长度约1.6μm.透射谱表明 ZNAs 掺锡之后,在300~800nm 波段透过率增大.根据 AM1.5计算获得在样品厚度相同的情况下,掺杂5%的 ZNAs∶Sn透过光总功率是 ZNAs 的1.6倍.

ZnO nanoarrays (ZNAs)and tin-doped ZnO nanorod arrays(ZNAs∶Sn)were synthesized by hydro-thermal method on seeded catalyst layer prepared by spin coating method.The effect of Sn doping in ZnO nano-rod arrays (ZNAs)was investigated by X-ray diffraction,scanning electron microscopy,optical transmittance spectra and ellipsometer,and the Bruggeman effective medium approximation (EMA)theory was employed to model porous columnar structures of ZNAs to acquire the optical constants of our samples.Compared with the pure ZNAs,the ZNAs∶Sn have a higher transmittance at the wavelength range 300-800 nm.Calculating with the global standard spectrum (AM1.5),the 5% doped ZNAs∶Sn has the highest energy of transmission at the wavelength 300-800 nm,which is 1.6 times as the value that the pure ZNAs has.

参考文献

[1] Ma T;Guo M;Zhang M;Zhang YJ;Wang XD .Density-controlled hydrothermal growth of well-aligned ZnO nanorod arrays[J].Nanotechnology,2007(26):35605-1-35605-7-0.
[2] Jun Dai;Chun Xiang Xu;Xiao Wei Sun .ZnO-Microrod/p-GaN Heterostructured Whispering- Gallery-Mode Microlaser Diodes[J].Advanced Materials,2011(35):4115-4119.
[3] Law M;Greene LE;Johnson JC;Saykally R;Yang PD .Nanowire dye-sensitized solar cells[J].Nature materials,2005(6):455-459.
[4] Wagh MS;Jain GH;Patil DR;Patil SA;Patil LA .Modified zinc oxide thick film resistors as NH3 gas sensor[J].Sensors and Actuators, B. Chemical,2006(1):128-133.
[5] 刘德雄,唐金龙,温才,胡思福.ZAO导电膜的制备与性能分析[J].功能材料,2011(z4):688-690.
[6] Rothschild A.;Komem Y.;Cosandey F.;Edelman F. .Sensing behavior of TiO2 thin films exposed to air at low temperatures[J].Sensors and Actuators, B. Chemical,2000(3):282-289.
[7] Jiaqiang Xu;Yuan Zhang;Yuping Chen .Uniform ZnO nanorods can be used to improve the response of ZnO gas sensor[J].Materials Science and Engineering. B, Solid-State Materials for Advanced Technology,2008(1):55-60.
[8] 陈茂彬,彭智,宋国君,姜宁,邵增军,沈丽.模板渗透法制备氧化锌纳米管阵列[J].功能材料,2008(04):578-579,583.
[9] 倪赛力,常永勤,多永正,张寅虎,龙毅,强文江,叶荣昌.Mn掺杂ZnO纳米线的拉曼散射和光致发光特性[J].功能材料,2007(08):1380-1382.
[10] Son J Y;Lim S J;Cho J H et al.Synthesis of horizon-tally aligned ZnO nanowires localized at terrace edges and application for high sensitivity gas sensor[J].Ap-plied Physics Letters,2008,93:053109-053114.
[11] Wang ZL .Zinc oxide nanostructures: growth, properties and applications[J].Journal of Physics. Condensed Matter,2004(25):R829-R858.
[12] 郑毅,孟宪权,刘文军,胡明.不同衬底上氧化锌纳米结构的水热法制备研究[J].功能材料,2009(09):1486-1489.
[13] Wu J J;Liu S C .Catalyst-free growth and characteriza-tion of ZnO nanorods[J].The Journal of Physical Chem-istry B,2002,106:9546-955 1.
[14] Vergés M A;Mifsud A;Serna C J .Formation of rod-like zinc oxide microcrystals in homogeneous solutions[J].Journal of the Chemical Society,Faraday Transac-tions,1990,86:959-963.
[15] W. I. Park;D. H. Kim;S.-W. Jung;Gyu-Chul Yi .Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods[J].Applied physics letters,2002(22):4232-4234.
[16] Hongtao Yuan;Yao Zhang .Preparation of well-aligned ZnO whiskers on glass substrate by atmospheric MOCVD[J].Journal of Crystal Growth,2004(1/4):119-124.
[17] Wen-Ting Chiou;Wan-Yu Wu;Jhy-Ming Ting .Growth of single crystal ZnO nanowires using sputter deposition[J].Diamond and Related Materials,2003(10/11):1841-1844.
[18] Baruah S;Dutta J .Hydrothermal growth of ZnO nano-structures[J].Science and Technology of Advanced Ma-terials,2009,10:013001-013002.
[19] Ahmad M;Zhao J;Iqbal J et al.Conductivity enhance-ment by slight indium doping in ZnO nanowires for op-toelectronic applications[J].Journal of Physics D:Ap-plied Physics,2009,42:165406-165422.
[20] Xiaoqing Qiu;Liping Li;Jing Zheng .Origin of the Enhanced Photocatalytic Activities of Semiconductors: A Case Study of ZnO Doped with Mg2+[J].The journal of physical chemistry, C. Nanomaterials and interfaces,2008(32):12242-12248.
[21] Fu, Xianliang;Wang, Xuxu;Long, Jinlin;Ding, Zhengxin;Yan, Tingjiang;Zhang, Guoying;Zhang, Zizhong;Lin, Huaxiang;Fu, Xianzhi .Hydrothermal synthesis, characterization, and photocatalytic properties of Zn2SnO4[J].Journal of Solid State Chemistry,2009(3):517-524.
[22] A. Yildiz;T. Serin;E. OEztuerk;N. Serin.Barrier-controlled electron transport in Sn-doped ZnO polycrystalline thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2012:90-94.
[23] Kumar S;Nann T .Shape control of Ⅱ-Ⅵ semiconduc-tor nanomaterials[J].SMALL,2006,2:316-329.
[24] Xu S;Lao C;Weintraub B;Wang ZL .Density-controlled growth of aligned ZnO nanowire arrays by seedless chemical approach on smooth surfaces[J].Journal of Materials Research,2008(8):2072-2077.
[25] Aspnes D E .Optical properties of thin films[J].THIN SOLID FILMS,1982,89:249-262.
[26] Likhachev D V .Characterization of complex inter-layer dielectric stack by spectroscopic ellipsometry:A simple method to reduce parameters correlations[J].THIN SOLID FILMS,2014,550:305-311.
[27] Schubert M .Another century of ellipsometry[J].Annalen der Physik,2006(7/8):480-497.
[28] Hsu SH;Liu ES;Chang YC;Hilfiker JN;Kim YD;Kim TJ;Lin CJ;Lin GR .Characterization of Si nanorods by spectroscopic ellipsometry with efficient theoretical modeling[J].Physica Status Solidi, A. Applied Research,2008(4):876-879.
[29] Eskandari, M;Ahmadi, V;Ahmadi, SH .Growth of Al-doped ZnO nanorod arrays on the substrate at low temperature[J].Physica, E. Low-dimensional systems & nanostructures,2010(5):1683-1686.
[30] M. Girtan;M. Socol;B. Pattier;M. Sylla;A. Stanculescu .On the structural, morphological, optical and electrical properties of sol-gel deposited ZnO:In films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2010(2):573-577.
[31] Berber M;Bulto V;Kli?R et al.Transparent nano-crystalline ZnO films prepared by spin coating[J].Scrip-ta Materialia,2005,53:547-55 1.
[32] Jin-Hong Lee;Kyung-Hee Ko;Byung-Ok Park .Electrical and optical properties of ZnO transparent conducting films by the sol-gel method[J].Journal of Crystal Growth,2003(1/2):119-125.
[33] Sarkar A;Ghosh S;Chaudhuri S et al.Studies on elec-tron transport properties and the Burstein-Moss shift in indium-doped ZnO films[J].THIN SOLID FILMS,1991,204:255-264.
[34] Mathias Haedrich;Christian Kraft;Heinrich Metzner;Udo Reisloehner;Christiane Loeffler;Wolfgang Witthuhn .Formation of CdS_x Te_(1-x) at the p-n junction of CdS-CdTe solar cells[J].Physica status solidi, C. Current topics in solid state physics: PSS,2009(5):1257-1260.
[35] Acharya, A.D.;Moghe, S.;Panda, R.;Shrivastava, S.B.;Gangrade, M.;Shripathi, T.;Phase, D.M.;Ganesan, V..Growth and characterization of nano-structured Sn doped ZnO[J].Journal of Molecular Structure,2012:8-15.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%