Si对太阳能以及光伏行业的发展具有重要战略意义,因此被广泛地研究和应用.利用固体透氧膜(solid oxide oxygen ion-conducting membrane,简称SOM)法在CaCl2熔盐中对SiO2直接电解制备多晶硅进行了深入研究.结果表明,不同压片压力及烧结温度会对阴极片电解过程产生影响.0.3g SiO2粉末在2MPa下压制成型并于900℃下烧结4h后,在1000℃施加4.0 V进行熔盐电解2h能得到纯多晶硅,电流效率为82.3％.电解反应过程包含SiO2→Si和SiO2 →CaSiO3→Si两条反应路径.
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