采用水热法制备了不同浓度(0％,1％,3％和5％(摩尔分数))Au掺杂的花状In2 O3微结构.利用X射线衍射仪(XRD)、X射线能谱分析仪(EDS)和扫描电子显微镜(SEM)对合成的 In2 O3的晶相、成分和微观形貌进行表征与分析.分析结果表明,制备的花状微结构的平均粒径约4μm,花状纳米片的厚度约为25 nm.同时,对制备的Au掺杂 In2 O3气体传感器的气敏特性进行了研究,实验结果表明,在最佳工作温度(250℃)条件下,3％(摩尔分数)Au掺杂In2 O3气体传感器对100×10－6丙酮气体的灵敏度达到23．1,响应时间和恢复时间分别为10和13 s.最后对Au掺杂In2 O3的气敏机理进行了分析.
In this paper,the different concentrations of Au-doped (0 mol%,1 mol%,3 mol% and 5 mol%) flower-like In2 O3 microstructures have been synthesized by hydrothermal method.The crystal phase,composi-tion and morphology of the as-prepared In2 O3 microstructures were investigated by X-ray diffraction (XRD), energy dispersive spectroscopy (EDS)and scanning electron microscope (SEM).The results exhibit that the av-erage diameter of the flower-like microstructure reaches to 4μm,and the measured thickness of the nanosheet is only 25 nm.Meanwhile,the gas sensing experiments were carried out on the fabricated Au-doped In2 O3 gas sensors.The measured results show that the sensitivity of 3 mol% Au-doped In2 O3 gas sensor can reach to 23.1 at the optimum operating temperature (250 ℃)to 100×10-6 acetone,and the response/recovery times are 10 and 13 s,respectively.At last,the gas sensing mechanism of Au-doped In2 O3 gas sensor was discussed.
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