采用磁控溅射和热处理系统制备Mg2 Si/Si异质结.首先在 n-Si(111)衬底上沉积 Mg 膜，经热处理后得到Mg2 Si/Si异质结.利用XRD、SEM、表面轮廓仪、伏安特性测试仪和霍尔效应测试仪，研究了 Mg2 Si/Si 异质结的晶体结构、表面形貌、Mg2 Si薄膜厚度、I-V特性及导电类型.结果表明，成功制备了Mg2 Si/Si 异质结，并得到其平均载流子浓度(－9．30×1012 cm－3)、导通电压(0．31 V)、导通电流(0．6 mA)、工作电压(0．53 V)等，测得该异质结为n-n型.
Hetero structures of Mg2 Si/Si were prepared by DC-magnetron sputtering and vacuum annealing. Firstly,Mg film was deposited on n-type Si(1 1 1 )substrate at room temperature,subsequently annealed in a vacuum furnace to form Mg2 Si/Si heterostructure.The crystal structure,surface topography,I-V characteris-tics and conduction type of the Mg2 Si/Si heterostructure were characterized with X-ray diffraction (XRD), scanning electron microscope (SEM),surface profile gauge,Volt-ampere characteristics of Integrated Tester and Hall Effect Measurement System (HEMS).The results showed that Mg2 Si/Si heterojunction with n-type type conducting,the carrier concentration was -9.30×1012 cm-3 ,threshold voltage was 0.31 V,threshold cur-rent was 0.6 mA and working voltage was 0.53 V.
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