以4H-SiC(0001)面为研究对象,采用原子力显微镜和 X光电子能谱研究了抛光晶片表面的形貌和成分,讨论了氧化剂浓度对SiC化学机械抛光去除速率以及微观形貌的影响.结果表明,在化学机械抛光过程中SiC晶片的表面会生成二氧化硅,抛光液中氧化剂的浓度直接影响 SiC的氧化进程,增大氧化剂的浓度可以显著提高抛光去除速率,当氧化剂浓度为0．15 mol/L时,抛光去除速率可以达到约1200 nm/h,同时可以获得一个无划痕、超光滑、具有原子台阶构型的抛光表面,表面粗糙度值Ra 低至0．0853 nm.
In this paper,the processed surface morphology and composition of 4 H-SiC were studied by atomic force microscopy and X-ray photoelectron spectroscopy,thus,the effect of oxidant concentration on the materi-al removal rate,together with microstructure of SiC substrates,were discussed.The polishing results indicated that SiC could be oxidized to SiO2 layer during the process of CMP,while the concentration of the oxidant had a distinct influence on the oxidation process.The removal rate could reach up to about 1 200 nm/h when the oxi-dant concentration was 0.15 mol/L,moreover,a scratch-free,ultra-smooth polished surface with atomic step structure morphology was obtained,with an extremely low Ra of 0.0853 nm level.
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