一维GaN纳米材料相对于薄膜材料在光电器件应用方面具有诸多优势，本文主要论述一维 GaN 纳米材料的主要制备方法及其光电器件应用的研究进展。首先分别介绍采用 MOCVD、MBE、CVD 及模板法制备一维GaN纳米材料，重点论述GaN纳米材料的结构与形貌调控。其次介绍一维 GaN 纳米材料分别应用于主要光电器件包括LED、太阳能电池、激光器及光探测器的研究动态，讨论纳米材料性能、结构以及制备技术对其器件性能的影响。最后对一维GaN纳米材料的发展与应用前景进行展望。
Compared with GaN film,one-dimensional GaN nanomaterial has many advantages in manufacturing optoelectronic devices.This paper synthetically narrated the main preparation methods of one-dimensional GaN nanomaterial and its application of optoelectronics devices.Firstly,the preparation methods including MOCVD, MBE,CVD and template method were introduced.The key analysis is about the growth parameters,morpholo-gy and structure control of one-dimensional GaN nanomaterial.Secondly,the optoelectronic devices such as LED,laser,solar cell as well as photodetector were interpreted,and mainly discussed the influence of the mate-rial properties,device structures and manufacturing technology on the device performance.In the end,the de-velopment and future application of one-dimensional GaN nanomaterials are prospected.
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