在不同厚度条件下(50～300nm),运用空间电荷限制电流法,对4,7-diphyenyl-1,10-phenanthroline(BPhen)的电子迁移率进行了测量.当厚度处在体性质占有优势的情况下,迁移率的数值与运用飞跃时间法所测得的数值非常吻合.对于有机电致发光器件的典型厚度,Bphen的电子迁移率为2.8×10-4cm2/Vs,在厚度为50nm时小于3.4×10-4cm2/V s.300 nm时,电场强度为0.3mV/cm.较低的迁移率是由界面陷阱状态造成的.
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