通过对实验室自主研发的10 kW新型微波等离子体装置基片台的改进,获得了更高的基片温度,更长的保温时间以及更均匀的基片温度.用直径为80 mm的硅片在改进后的基片台上用MPCVD法沉积大面积金刚石膜.在微波功率为5 kW,沉积气压为5.6 kPa环境下基片中心获得900℃的基片温度,沉积时间8h.实验后对硅片中央区域,距离中心20 mm区域,距离基片中心35 mm区域进行对比分析,通过SEM显示三个区域金刚石膜的表面形貌差异很小,通过拉曼光谱观察到在1 332 cm-1处代表金刚石相的特征峰无明显的变化从而确定可金刚石膜在质量上的均匀性,最后对金刚石的厚度表征发现所观察的区域内膜厚变化保持在0.2~0.4 μm之间且金刚石呈现柱状生长模式.
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