利用真空蒸发的方法制备ZnSe多晶薄膜,并采用双源法对薄膜进行了Dy的掺杂.用XRD、紫外可见分光光度仪对薄膜的性质进行了表征.结果表明,当Zn、Se原子配比为0.9:1时可制备较理想的ZnSe多晶薄膜,稀土Dy掺杂并未改变样品的物相结构,但掺杂使薄膜的晶格常数及晶胞体积略有增大,还使得薄膜的晶粒尺寸及压应力变小,掺杂后薄膜的光透射性得到改善.
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