由于具有抛光速率快、选择性好、自动停止等特点,二氧化铈浆料被广泛用于材料的表面抛光处理,但抛光机理研究的相对滞后严重制约其物化改性和推广.针对这一现状,本文介绍了二氧化铈浆料抛光过程中的物理作用及化学作用,总结了化学机械抛光机理,并对今后研究方向提出了展望.
参考文献
[1] | 张鹏珍,雷红,张剑平,施利毅.纳米氧化铈的制备及其抛光性能的研究[J].光学技术,2006(05):682-684,687. |
[2] | 宋晓岚,李宇煙,江楠,屈一新,邱冠周.化学机械抛光技术研究进展[J].化工进展,2008(01):26-31. |
[3] | Ming Jiang;N. O. Wood;R. Komanduri .On chemo-mechanical polishing (CMP) of silicon nitride (SI{sub}3N{sub}4) workmaterial with various abrasives[J].Wear: an International Journal on the Science and Technology of Friction, Lubrication and Wear,1998(1):59-71. |
[4] | Cock L .Chemical processes in glass polishing[J].Journal of Non-Crystalline Solids,1990,120(1-3):152-171. |
[5] | Nojo H;Kodera M;Nakata R.Slurry engineering for selfstopping,dishing free SiO2-CMP[A].San Francisco:IEEE,1996:349-352. |
[6] | 李永绣,周新木,辜子英,彭德院,胡平贵,周雪珍,焦晓燕,何小彬,魏坤,刘桂华.稀土抛光材料的生产、应用及其新进展[J].稀土,2002(05):71-74. |
[7] | 雷红,雒建斌,张朝辉.化学机械抛光技术的研究进展[J].上海大学学报(自然科学版),2003(06):494-502. |
[8] | Katoh T;Kang H G;Paik U et al.Effects of abrasive morphology and surfactant concentration on polishing rate of ceria slurry[J].Japanese Journal of Applied Physics,2003,42(03):1150-1153. |
[9] | P. Wrschka;J. Hernandez;Y. Hsu;T. S. Kuan;G. S. Oehrlein;H. J. Sun;D. A. Hansen;J. King;M. A. Fury .Polishing parameter dependencies and surface oxidation of chemical mechanical polishing of Al thin films[J].Journal of the Electrochemical Society,1999(7):2689-2696. |
[10] | Yongwu Zhao;L. Chang .A micro-contact and wear model for chemical-mechanical polishing of silicon wafers[J].Wear: an International Journal on the Science and Technology of Friction, Lubrication and Wear,2002(3/4):220-226. |
[11] | Tseng W T;Wang Y L .Reexamination of pressure and speed dependences of removal rate during chemical-mechanical polishing processes[J].Journal of the Electrochemical Society,1997,144(02):L15-L17. |
[12] | Bouzid D;Zegadi R;Jungstand U et al.Investigation of cerium oxide pellets for optical glass polishing[J].Glass Technology,2001,42(02):60-62. |
[13] | Jianfeng Luo;David A. Dornfeld .Material removal mechanism in chemical mechanical polishing: theory and modeling[J].IEEE Transactions on Semiconductor Manufacturing: A Publication of the IEEE Components, Hybrids, and Manufacturing Technology Society, the IEEE Electron Devices Society, the IEEE Reliability Society, the IEEE Solid-State Circuits Council,2001(2):112-133. |
[14] | Runnels S R .Feature-scale fluid-based erosion modeling for chemical-mechanical polishing[J].Journal of the Electrochemical Society,1994,141(07):1900-1904. |
[15] | John Tichy;Joseph A. Levert;Lei Shan;Steven Danyluk .Contact mechanics and lubrication hydrodynamics of chemical mechanical polishing[J].Journal of the Electrochemical Society,1999(4):1523-1528. |
[16] | Bhushan M.;Lukens JE.;Rouse R. .CHEMICAL MECHANICAL POLISHING IN SEMIDIRECT CONTACT MODE[J].Journal of the Electrochemical Society,1995(11):3845-3851. |
[17] | 章建群,张朝辉.非接触化学机械抛光的材料去除模型[J].科学通报,2008(10):1228-1234. |
[18] | 胡平贵,李颖毅,曾立新,辜子英,彭德院,李永绣.氧化铈浆料的流变性研究[J].稀土,2005(03):76-78. |
[19] | Suphantharida P;Osseo A K .Cerium oxide slurries in CMP.Electrophoretic mobility and adsorption investigations of ceria/silicate interaction[J].Journal of the Eleetrechemical Society,2004,151(10):658-662. |
[20] | Robert Sabia;Harrie J. Stevens .Performance characterization of cerium oxide abrasives for chemical-mechanical polishing of glass[J].Machining Science and Technology,2000(2):235-251. |
[21] | Tamilmani S;Shan J;Huang W.Interaction Between Ceria and Hydroxylamine[A].San Francisco:Materials Research Society,2003:161-166. |
[22] | Gilliss S R.Nanochemistry of Ceria Abrasive Particles[A].San Francisco:Materials Research Society,2004:9-14. |
[23] | Kelsall A .Cerium oxide as a route to acid free polishing[J].Glass Technology,1998,39(01):6-9. |
[24] | Wang L Y;Zhang K L;Song Z T et al.Ceria concentration effect on chemical mechanism polishing of optical glass[J].Applied Surface Science,2006,253(11):4951-4954. |
[25] | 陈杨,陈志刚,陈爱莲.纳米CeO2磨料在硅晶片化学机械抛光中的化学作用机制[J].润滑与密封,2006(03):67-69,72. |
[26] | Chandrasekaran N.Material removal mechanisms of oxide and nitride CMP with ceria and silica based slurriesanalysis of slurry particles pre-and post-dielectric CMP[A].San Francisco:Materials Research Society,2004:257-268. |
[27] | Kim J P;Yeo J G;Pail U .Modification of electrokinetic behavior of CeO2 abrasive particles in chemical mechanical polishing for trench isolation[J].Journal of the Korean Physics Society,2001,39(01):197-200. |
[28] | Song X L;Xu D Y;Zhang X W et al.Electrochemical behavior and polishing properties of silicon wafer in alkaline slurry with abrasive CeO2[J].Transactions of Nonferrous Metals Society of China,2008,18:178-182. |
[29] | 林鸿海 .添加剂在氧化铈抛光中的作用机理的探索[J].光学技术,1991,3:42-44. |
[30] | 宋晓岚,邱冠周,史训达,王海波,曲鹏.混合表面活性剂分散纳米CeO2颗粒的协同效应[J].湖南大学学报(自然科学版),2005(05):95-99. |
[31] | Park JG;Katoh T;Lee WM;Jeon H;Paik U .Surfactant effect on oxide-to-nitride removal selectivity of nano-abrasive ceria slurry for chemical mechanical polishing[J].Japanese journal of applied physics,2003(9a):5420-5425. |
[32] | Hyun-Goo Kang;Dae-Hyeong Kim;Takeo Katoh;Sung-Jun Kim;Ungyu Paik;Jea-Gun Park .Dependence of Non-Prestonian Behavior of Ceria Slurry with Anionic Surfactant on Abrasive Concentration and Size in Shallow Trench Isolation Chemical Mechanical Polishing[J].Japanese journal of applied physics,2006(5a):3896-3904. |
[33] | Hoshino T.;Terasaki Y.;Susa K.;Kurata Y. .Mechanism of polishing of SiO2 films by CeO2 particles[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2001(1/3):129-136. |
[34] | Rajendran A;Takahashi Y;Koyama M;Kubo M;Miyamoto A .Tight-binding quantum chemical molecular dynamics simulation of mechano-chemical reactions during chemical-mechanical polishing process of SiO2 surface by CeO2 particle[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2005(1/4):34-38. |
[35] | Ahiade J T;Wouseop C;Singh R K .Effect of pH on ceria-silica interactions during chemical mechanical polishing[J].Journal of Materials Research Society,2005,20(05):1139-1145. |
[36] | J. T. Abiade;S. Yeruva;W. Choi .A Tribochemical Study of Ceria-Silica Interactions for CMP[J].Journal of the Electrochemical Society,2006(11):G1001-G1004. |
[37] | Lu Z;Lee S H;Gorantla V R K et al.Effects of mixed abrasives in chemical mechanical polishing of oxide films[J].Journal of Materials Research,2003,18(10):2323-2330. |
[38] | A. Jindal;S. Hegde;S. V. Babu .Chemical Mechanical Polishing of Dielectric Films Using Mixed Abrasive Slurries[J].Journal of the Electrochemical Society,2003(5):G314-G318. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%