纳米金属多层膜由于其巨磁电阻性能而受到人们的重视.采用双脉冲控电位技术在单晶硅上沉积铜/钴纳米多层膜.测量了电沉积过程中的阴极极化曲线及电流-时间曲线,确定了沉积电位;利用扫描电子显微技术及X射线衍射技术观察了沉积层的断面形貌及晶体结构.结果表明,沉积层结构清晰、连续,各子层厚度均匀.
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