对照几种传统的金属基电子封装材料，较详细地阐述了W-Cu、Mo-Cu、SiC/Al等新型封装材料的性能特点、制造方法、应用背景以及存在的问题。介绍了金属基电子封装材料的最新发展动态，指出国际上近年来的研究与开发主要集中在净成型技术、新材料体系探索以及材料的集成化应用等方面。最后，文章对金属基电子封装材料的发展趋势进行了展望，作者认为，未来的金属基电子封装材料将朝着高性能、低成本、轻量化和集成化的方向发展。
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