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随着集成技术进入亚微米阶段,传统的硅基集成电路由于存在闩锁等不利因素,使其应用受到了限制.而基于SOI材料的微电子技术是能突破硅材料与硅集成电路限制的新技术[1],是国际半导体的前沿技术之一,是发展兵器装备用元器件的又一关键材料技术.介绍了SOI材料结构技术用于微电子器件的优势、SOI结构及基于SOI结构材料的兵器微电子技术应用,展望了SOI技术的发展前景.

参考文献

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[7] Gianni Taraschi;Cheng Z Y;Cristoloveanu X S;Hemment P L F Izumi K,.Relaxed SiGe on insulator fabrication via wafer bonding and large transfer:. Etch - back and smartcut alternatives[M].Silicon - on - Insulator Technology and Devices, Chicago (USA),2001:27.
[8] 志成.SOI(绝缘体上硅)的采用日趋活跃[J].电子产品世界,2004(09):97,88.
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[12] Samuel K H Fung;Mukesh Khare.Gate length scaling accelerated to 30 nm regime using ultra- thin film PD- SOI technology[A].,2001:29-3.
[13] Ken Uchida;Junji Koga;Ryuji Ohba.Experimental evidences of quanyum - mechanical effects on low - field mobility,gate- channel capacitance,and threshold voltage of ultrathin body SOI MOSFETS[A].,2001:29-4.
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