随着集成技术进入亚微米阶段,传统的硅基集成电路由于存在闩锁等不利因素,使其应用受到了限制.而基于SOI材料的微电子技术是能突破硅材料与硅集成电路限制的新技术[1],是国际半导体的前沿技术之一,是发展兵器装备用元器件的又一关键材料技术.介绍了SOI材料结构技术用于微电子器件的优势、SOI结构及基于SOI结构材料的兵器微电子技术应用,展望了SOI技术的发展前景.
参考文献
[1] | Collinge J P.SOI Technology Materials to VISL[M].England:Kluwer Academic Pub, Boston,1991:1-10. |
[2] | Adan A O;Naka T;Kagisawa A.SOI as a mainstream IC technology proceedings[A].,1998:9. |
[3] | SIMOX SOI Advantages[DB/OL].http://www.ibis.com/advantages.htm1 |
[4] | 考林基J P.SOI-21世纪的硅集成电路技术[M].北京:科学出版社:160-161. |
[5] | Thomas Scotnicki;Cristoloveanu X S;Hemment P L F;Izumi K,.Silicon on nothing(SON) -fabrication, material and devices[M].Silicon - on - Insulator Technology and Devices, Chicago (USA),2001:391. |
[6] | Gamble H S;Cristoloveanu S X;Hemment P L F.Variants on bonds SOI for advanced ics[M].Silicon- on InsuLator Technology and Devices, Chicago(USA),2001:4. |
[7] | Gianni Taraschi;Cheng Z Y;Cristoloveanu X S;Hemment P L F Izumi K,.Relaxed SiGe on insulator fabrication via wafer bonding and large transfer:. Etch - back and smartcut alternatives[M].Silicon - on - Insulator Technology and Devices, Chicago (USA),2001:27. |
[8] | 志成.SOI(绝缘体上硅)的采用日趋活跃[J].电子产品世界,2004(09):97,88. |
[9] | Chen ZZ.;Zhang XY.;Zhang R.;Chen P.;Zhou YG.;Zang L.;Jiang RL.;Huang ZC.;Zheng YD.;Wu ZS.;Sun XT.;Chen F.;Shen B. .Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition[J].Applied physics, A. Materials science & processing,1998(5):567-570. |
[10] | Monfray S;Skotnicki T;Morand Y.First 80 nm SON (silicon- on -nothing) MOSFETS with perfect morphology and high electrical performance[A].,2001:29-7. |
[11] | Narasimha S;Ajmera A.High performance sub - 40 nm CMOS devices on SOI for the 70 nm technology node[A].,2001:29-2. |
[12] | Samuel K H Fung;Mukesh Khare.Gate length scaling accelerated to 30 nm regime using ultra- thin film PD- SOI technology[A].,2001:29-3. |
[13] | Ken Uchida;Junji Koga;Ryuji Ohba.Experimental evidences of quanyum - mechanical effects on low - field mobility,gate- channel capacitance,and threshold voltage of ultrathin body SOI MOSFETS[A].,2001:29-4. |
[14] | [OL].http://www.smartpartner.com.cn |
[15] | [OL].http://www.news.201.com.cn |
[16] | [OL].Http://www.dawning.com.cn |
[17] | 石志宏;李佑斌;李学宁 .SiC材料、器件及其应用前景[J].微电子学,1996,26(04):275-278. |
[18] | 江波,何平,田立林,林羲.一种结构调整后的DSOI器件[J].半导体学报,2002(09):966-971. |
[19] | 海涛,刘光辉,周真,卢为.SOI传感器的现状和发展趋势[J].传感器技术,2003(05):61-64. |
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