采用射频磁控反应溅射法,以高纯Si为靶材,高纯O2和N2气为反应气体,在蓝宝石衬底上制备了氧化硅和氮化硅薄膜.讨论了N2气流量、射频功率、溅射气压和靶基距等工艺参数对Si3N4薄膜沉积速率的影响规律.结果表明:随N2气流量的增加,沉积速率先降低,最后趋于稳定;随射频功率增加,沉积速率增加;随溅射气压和靶基距增加,沉积速率先增后减.同时,高温强度试验和FTIR测试结果表明:在800℃时,镀膜后蓝宝石的弯曲强度比镀膜前提高了50.2%;平均透过率净增加8%以上,达到了很好的增透保护效果.
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