利用改进的BGSOI工艺成功制备低表面应力的厚膜SOI晶片,并表征晶片的显微结构、界面和表面应力.研究结果显示:晶片的各层区域分明,界面平整,上层硅厚度为76.5 μm,SiO2埋层厚度为0.865 μm;晶片键合良好,有效键合面积大于95%,键合强度大于13.54 J/m2;表面应力小于12.6 MPa,已成功制作出微加速度计.
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