采用热压烧结技术成功制备Cp/SiC基复合材料,并对其进行短时间低温氧化行为研究.针对不同碳粉含量的Cp/SiC复合材料,分析氧化处理过程对其相组成、氧化层结构以及质量损失行为的影响.研究结果表明,随着碳粉含量增加,氧化层表面的孔洞尺寸和深度均呈现出增加的趋势.氧化层与碳化硅基体的分界清晰,无过渡区,不能形成致密氧化层,反应氧化层厚度也逐渐增加.添加碳粉不利于SiC基复合材料的抗氧化性的改善.
参考文献
| [1] | Kim D H;Kim C H .Toughening behavior of silicon carbide with the additions of yttria and alumina[J].Journal of the American Ceramic Society,1990,73(05):1431-1434. |
| [2] | Guy Ervin J R .Oxidation behavior of silicon carbide[J].Journal of the American Ceramic Society,1958,41:347-352. |
| [3] | Costello J A;Tressler R E .Oxidation kinetics of hot-pressed and sintered a-SiC[J].Journal of the American Ceramic Society,1981,64:327-331. |
| [4] | Costello J A;Tressler R E .Oxidation kinetics of silicon carbide crystals and ceramics:I,In dry oxygen[J].Journal of the American Ceramic Society,1986,69(191):674-681. |
| [5] | Singhal S C.Oxidation kinetics of hot-pressed SiC[J].Journal of Materials Science,1976(11):1246-1253. |
| [6] | Singhal S C;Lange F F .Effect of alumina content in the oxidation of hot-pressed SiC[J].Journal of the American Ceramic Society,1975,58:433-435. |
| [7] | Costello J A;Tressler R E;Tsong I S T .Boron redistribution in sintered a-SiC during thermal oxidation[J].Journal of the American Ceramic Society,1981,64:332-335. |
| [8] | Liu Deanmo.Oxidation of polycrystalline a-silicon carbide ceramic[J].Ceramics Intemtional,1997(23):425-436. |
| [9] | Guo Shuqi;Hirosaki N;Tanaka H.Oxidation behavior of liquid-phase sintered SiC with AIN and Er2O3 additives between 1 200 ℃ and 1 400 ℃[J].Journal of the European Ceramic Society,2003(23):2023-2029. |
| [10] | 潘牧,南策文.碳化硅（SiC）基材料的高温氧化和腐蚀[J].腐蚀科学与防护技术,2000(02):109-113,120. |
| [11] | 唐汉玲,曾燮榕,熊信柏,李龙,邹继兆.短切碳纤维增强碳化硅复合材料的氧化性能研究[J].无机材料学报,2009(02):305-309. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%