利用Al2O3和La2O3作为烧结助剂,在1 950 ℃下用液相烧结技术成功制备SiC陶瓷,并在800℃下对该液相烧结SiC陶瓷进行氧化处理.用XRD、SEM等手段分析SiC陶瓷表面氧化产物相组成和微观结构的演变,并探讨SiC陶瓷氧化动力学规律.研究发现,SiC陶瓷氧化动力学曲线遵循抛物线规律,随着氧化时间增加,其氧化速率开始时迅速上升,其后降低,逐渐趋于平缓.
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