欢迎登录材料期刊网

材料期刊网

中国科学院金属研究所 科学出版社
高级检索
  1. 首页
  2. 期刊
  3. 材料科学与工艺
  4. Sol-Gel法制备PZT铁电薄膜新进展

材料科学与工艺, 2001, 9(4): 442-448. doi: 10.3969/j.issn.1005-0299.2001.04.026

Sol-Gel法制备PZT铁电薄膜新进展

王福平 1, , 姜兆华 2, , 于艳菊 3, , 赵连城 4,

1.哈尔滨工业大学应用化学系,

2.哈尔滨工业大学应用化学系,

3.哈尔滨工业大学材料科学与工程学院,

4.哈尔滨工业大学材料科学与工程学院,

基金项目:   国防科技预研基金(OOJ18.5.2HT0133)  

关键词： PZT , 铁电 , 薄膜 , Sol-Gel

Advances of sol-gel derivation of PZT ferroelectric thin films

从底电极的选择、过渡层的引入、外延膜的生长、取代阳离子的改性四个方面介绍了Sol-Gel法制备PZT铁电薄膜的研究进展,简述了PZT的Sol-Gel机理研究现状和引起PZT铁电薄膜极化疲劳的原因,分析了Sol-Gel法制备PZT铁电薄膜研究中存在的问题,并提出展望.

参考文献

[1] BUDD K D .Sol-gel processing of PbTiO3, PbZrO3,PZT, PLZT thin films[J].Brit Cer Proc,1985,36:107-121.
[2] FUKUSHIMA J .Preparation of ferroelectric compounds[J].Journal of Materials Science,1984,19:595-598.
[3] ARCON I;MALIC B;KOSEC M et al.Study of the lead environment in liquid and as-dried precursors of PZ, PT and PZT thin films[J].Journal of Sol-Gel Science and Technology,1998,13:861-864.
[4] Nashimoto K;NAKAMURAS .Preparation and characterizaion of Sol-G el derived epitaxial and oriented Pb (Zr0.52Ti0.48)O3 thin films[J].Japanese Journal of Applied Physics,1994,33:5147-5150.
[5] WILLEMS G J;WOUTERS D J;MAES H E et al.Nucleation and orientation of Sol-Gel PZT-films on Pt electrode[J].Integrated Ferroelectrics,1997,15:19-28.
[6] Hwang K S;KIM B H .X-ray diffraction studies of epitaxial Pb(Zr,Ti)O3 films prepared by chemical solution method[J].Materials Chemistry and Physics,1999,57:224-227.
[7] FLOQUE N;HECTOR J;GAUCHER P .Corretation between structure, microstructure, and ferroelectric properties of PbZr0.2Ti0.s O3 intergrated film: influence of the Sol-Gel process and the substrate[J].Journal of Applied Physics,1998,84(07):3815-3826.
[8] YU Y S;KIM B H .Dielectric and electric properties of SOl-Gel derived PZT and PNZT thin films[J].Integrated Ferroelectrics,1999,25(01):187-194.
[9] Kim CJ.;Jiang ZT.;No K.;Yoon DS. .INVESTIGATION OF THE DRYING TEMPERATURE DEPENDENCE OF THE ORIENTATION IN SOL-GEL PROCESSED PZT THIN FILMS[J].Journal of Materials Science,1997(5):1213-1219.
[10] R. Caruso;O. de Sanctis;A. Frattini;C. Steren;R. Gil .Synthesis of precursors for chemical solution deposition of PZT thin films[J].Surface & Coatings Technology,1999(1):44-50.
[11] YI G H;SAYER M .An acetic/water based Sol-Gel PZT process 1: modification of Zr and Ti alkoxides with acetic acid[J].Journal of Sol-Gel Science and Technology,1996,6:65-74.
[12] YI G H;SAYER M .An acetic/water based Sol-Gel PZT process 2: formation of a water based solution[J].Journal of Sol-Gel Science and Technology,1996,6:74-82.
[13] IZTOK A;BARBARA M;MARIJA K et al.Study of the lead environment in liquid and as-dried precursors of PZ, PT and PZT thin films[J].Journal of Sol-Gel Science and Technology,1998,13:861-864.
[14] MALIC B;ARCON I;KODRE A et al.EXAFE study of amorphous precursors for Pb ( Zr, Ti ) O3 ceramics[J].Journal of Sol-Gel Science and Technology,1999,16:135-141.
[15] FALLON G D;SPICCIA L;WEST B O et al.Chemical synthesis studies on Pb Zr alkoxides: a new Pb-Zr structural type, Pb3 Zr7 ( μ4 - O) 4 ( μ3 - O ) 4 ( μ -O2CCH3 )8 ( μu - Oi Pr)6 ( Oi Pr)4[J].Journal of Sol-Gel Science and Technology,1999,16:119-128.
[16] Zhang Q;VICKERS M E;PATEL A et al.Determination of particle size and shape during the hydrolysis of Pb ( Zr0.3 Ti0.7 ) O3 precursor solutions[J].Journal of Sol-Gel Science and Technology,1998,11:141-152.
[17] Alshareef HN.;Warren WL.;Headley TJ.;Dimos D.;Voigt JA. Nasby RD.;Tuttle BA. .EFFECT OF B-SITE CATION STOICHIOMETRY ON ELECTRICAL FATIGUE OF RUO2/PB(ZRXTI1-X)O-3/RUO2 CAPACITORS[J].Journal of Applied Physics,1996(2):1013-1016.
[18] Aggarwal S;PERUSSE S R;NAGARAJ B et al.Oxide electrode as barriers to hydrogen damage of Pb(Zr,Ti) O3-based ferroelectric capacitors[J].Applied Physics Letters,1999,74(20):3023-3025.
[19] Lee K B;TIRUMALA S;SONG Y et al.Simple electrode-barrier structure using Ir for integration of PZT-based high-density nonvolatile memories[J].Materials Research Society Symposium Proceedings,1998,541:197-202.
[20] Norga G J;FE L;WOUTERS D J et al.Sol-gelgrowth of high-quality Pb(Zr,Ti) O3 films on RuO2 using seed layers[J].Materials Research Society Symposium Proceedings,1999,541:307-312.
[21] MAIWA H;ICHINOSE N;OKAZAKI K .Preparation and properties of Ru and RuO2 thin film electrodes for ferroelectric thin films[J].Japanese Journal of Applied Physics,1994,33:5223-5226.
[22] AL-SHAREEF H N;KINGON A I .Electrode materials for ferroelectric thin film capatitors and their effect on the electrical properties[J].Materials Research Society Symposium Proceedings,1992,193:69-74.
[23] DOI H;KAGEYAMA K .Effect of metallic oxides containing composite electrodes on crystallization and ferroelectric properties of Pb( Zr0.52 ,Ti0.48 ) O3 thin films deposited by the Sol-Gel method[J].Journal of Sol-Gel Science and Technology,1999,16:21-27.
[24] DESU C S;VEDUKA R;LEE K B et al.Electrical properties of PZT thin film capacitors with novel Pt-Ir based electrode barriers for nonvolatile memories[J].Materials Research Society Symposium Proceedings,1998,541:71-76.
[25] Lee b s;LEE J Y .Role of PtO electrode in fatigue in Pb(Zr,Ti) O3 films[J].Japanese Journal of Applied Physics Part 2,1999,38(8A):L870-L871.
[26] Toyota M;OSAMURA H;KOUJI Y et al.Ferroelectric properties of Pb ( Zr, Ti) O3 capacitor with thin SrRuO3 films within both electrodes[J].Japanese Journal of Applied Physics,2000,39(5B):2110-2113.
[27] DOI H;ATSUKI T;SOYAMA N et al.Influence of buffer layers on microstructural and ferroelectric characteristics of Sol-Gel derived PbZr xTi 1-x O3 thin films[J].Japanese Journal of Applied Physics,1994,33:5159-5166.
[28] Shimizu M;SUGIYAMA M;FUJISAWA H et al.Control of orientation Pb (Zr, Ti) O3 thin films using PbTiO3 buffer layer[J].Japanese Journal of Applied Physics,1994,33:5167-5171.
[29] Kim SH.;Oh YJ.;Kim CE. .INFLUENCE OF AL2O3 DIFFUSION BARRIER AND PBTIO3 SEED LAYER ON MICROSTRUCTURAL AND FERROELECTRIC CHARACTERISTICS OF PZT THIN FILMS BY SOL-GEL SPIN COATING METHOD[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):321-326.
[30] Tomoyuki Sakoda;Katsuhiro Aoki;Yukio Fukuda .Control of Grain Structure of Sputtering Lead-Zirconate-Titanate Thin Film Using Amorphous Lead-Titanate Buffer Layer[J].Japanese journal of applied physics,1999(9A):5162-5165.
[31] LIU W G;KO J S;ZHU W G .Preparation and properties of multilayer Pb(Zr,Ti) O3/PbTiO3 thin films for pyroelectric application[J].Thin Solid Films,2000,371(01):254-258.
[32] Lee C.;Itoh T.;Suga T.;Kawano S. .CHARACTERISTICS OF SOL-GEL DERIVED PZT THIN FILMS WITH LEAD OXIDE COVER LAYERS AND LEAD TITANATE INTERLAYERS[J].Journal of Materials Science,1996(17):4559-4568.
[33] Toshio Ogawa;Yuka Tsuboi .Growth Model and Electrical Properties of Lead Zirconate Titanate Thin Films on Nickel Alloy Electrode Prepared by Thermal Decomposition[J].Key engineering materials,2000(181/182):73-76.
[34] JANG J H;YOON K H .Electric fatigue properties of Sol-Gel-derived Pb ( Zr,Ti ) O3/PbZrO3 mutilayered thin films[J].Applied Physics Letters,1999,75(01):130-132.
[35] LEE S G;LEE Y H .Dielectric properties of Sol-Gel derived PZT(40/60)/PZT ( 60/40 ) heterolayeted thin films[J].Thin Solid Films,1999,353(01):244-248.
[36] ZENGJM;WANGLW;GAOJX et al.Structural and electric characteristics of oriented Pb( Zr0.52Ti0.48 ) O3 ferroelectric thin films deposited on diamond substrates by a simple Sol-Gel process[J].Journal of Crystal Growth,1999,197:874-878.
[37] Meng XJ.;Li B.;Guo SL.;Ye HJ.;Chu JH.;Cheng JG. .Low-temperature preparation of highly (111) oriented PZT thin films by a modified sol-gel technique[J].Journal of Crystal Growth,2000(1/4):541-545.
[38] CHOC R .Heteroepitaxial growth and switching behaviors of PZT(53/47 ) films on LaA1O3 and SrTiO3 substrates[J].Materials Science and Engineering B:Solid-state Materials for Advanced Technology,1999,64(02):113-117.
[39] Wang X C;CAO Wei;TIAN J et al.Synthesis of highly oriented PZT ferroelectric thin film[J].Journal of Mat Eng,1999,2:16-18.
[40] Lee K B;TIRUMALA S;DESU S B .Highly c-axis oriented Pb(Zr,Ti)O3 thin films grow on Ir electrode barrier and their electrical properties[J].Applied Physics Letters,1999,74(10):1484-1486.
[41] Aoki K;FUKUDA Y;NUMATA K et al.Dielectric properties of (111) and (100) lead-zirconate-titanate films prepared by Sol-Gel technique[J].Japanese Journal of Applied Physics,1994,33:5155-5158.
[42] Hwang K S .The influence of prefiring conditions on the epitaxy of Pb(Zr,Ti)O3 films by dipping-pyrolysis process[J].Materials Chemistry and Physics,1999,57:228-231.
[43] Yimin Liu;Pradeep P.Phule .Sequence of phase formation in chemically derived ferroelectric lead zirconate titanate Pb(Zr_0.4Ti_0.6)O_3 thin films[J].Journal of the American Ceramic Society,1997(9):2410-2412.
[44] WANG Z J;MAEDA RYUTARO .Effect of heat treatment on preperred orientation of Sol-Gel deposited PZT thin films[J].Journal of the Japan Institute of Metals,2000,64(05):383-386.
[45] X. J. Meng;J. G. Cheng;J. L. Sun;J. Tan;H. J. Ye;J. H. Chu .Dependence of texture development on thickness of single-annealed-layer in sol-gel derived PZT thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(1):22-25.
[46] Boyle TJ.;Alshareef HN. .A NEW AND RAPID PROCESS FOR PRODUCTION OF SOLUTION-DERIVED (PB,LA)(ZR,TI)O-3 THIN FILMS AND POWDERS[J].Journal of Materials Science,1997(9):2263-2266.
[47] GOEL T C;MENDIRATTA R G.Electrical properties of Sol-Gel processed PZT and PLZT thin films[M].[s.l. ] :[s.n. ],1999:477-480.
[48] FE L;MALIC B;NORGA G.Role of precursor chemistry in the ferroelectric properties of donor doped Pb ( Zr, Ti) O3 thin films[A].,1998:369-374.
[49] Klissurska RD.;Reaney IM.;Pawlaczyk C.;Kosec M.;Setter N.;Brooks KG. .EFFECT OF NB DOPING ON THE MICROSTRUCTURE OF SOL-GEL-DERIVED PZT THIN FILMS[J].Journal of the American Ceramic Society,1995(6):1513-1520.
[50] Klissurska RD.;Brooks KG.;Setter N.;Tagantsev AK. .USE OF FERROELECTRIC HYSTERESIS PARAMETERS FOR EVALUATION OF NIOBIUM EFFECTS IN LEAD ZIRCONATE TITANATE THIN FILMS[J].Journal of the American Ceramic Society,1997(2):336-342.
[51] 刘大格 .PZT铁电薄膜溶胶-凝胶制备及微结构与性能研究[D].哈尔滨工业大学,1999.
[52] WANG Y Q;WU N J;IGNATIEV A .Mn and Sb doped-PZT thin films for uncooled infared detector array[J].Integrated Ferroelectrics,1999,25(01):21-30.
[53] Nashimoto K;NAKAMURA S;MORIKAWA T et al.Electrical properties of heterostructure (Pb,La)(Zr,Ti)O3waveguides on Nb-SrTiO3[J].Japanese Journal of Applied Physics Part 2,1999,38:5641-5645.
[54] Amanuma K;HASE T;MIYASAKA Y .Fatigue characteristics of Sol-Gel derived Pb ( Zr, Ti ) O3 thin films[J].Japanese Journal of Applied Physics,1994,33:5211-5214.
[55] MIHARA T;WATANABE H;CAARLOS A et al.Characteristic change due to polarization fatigue of SolGel ferroelectric Pb ( Zr, Ti ) O3 thin-film capacitors[J].Japanese Journal of Applied Physics,1994,33:5281-5286.
[56] Colla E L;TAGANTSEV A K;TAYLOR D V et al.Fatigue state of the Pt-PZT-Pt system[J].Integrated Ferroelectrics,1997,18:19-28.
[57] PATON E;BRAZIER M;MANSOUR S et al.A critical study of defect migration and ferroelectric fatigue in lead zirconate titanate thin film capacitors under extreme temperatures[J].Integrated Ferroelectrics,1997,18:29-37.
[58] Du XF.;Chen IW. .Fatigue of Pb(Zr0.53Ti0.47)O-3 ferroelectric thin films[J].Journal of Applied Physics,1998(12):7789-7798.
[59] Kobayashi S;AMANUMA K;HADA H .Effect of interconnect layer on Pb(Zr,Ti)O3 thin film capacitor degradation[J].IEEE Transactions on Electron Devices,1999,19(11):417-419.
[60] Law C W;TONG K Y;LI J H;et al. .Effect of oxygen content and thicknedd of sputtered RuO, electrodes on the ferroelectric and fatigue properties of Sol-Gel PZT thin films[J].Thin Solid Films,1999,354(01):162-168.
[61] Matthew Dawber;J. F. Scott .A model for fatigue in ferroelectric perovskite thin films[J].Applied physics letters,2000(8):1060-1062.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
作者相关
文章评分
  • 您的评分：
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%

版权所有©2010中国科学院金属研究所中国科技出版传媒股份有限公司

本系统由北京仁和汇智信息技术有限公司设计开发

技术支持：info@rhhz.net