为探讨铝硅合金中共晶硅的变质机理,根据杂质诱发共生成对孪晶的理论,对共晶硅的变质机理进行了分析.结果表明:杂质原子诱发的共生成对孪晶之一使得共晶硅在平行于{111}晶面的方向以TPRE的机制生长,而共生成对孪晶中的另一处与原{111}晶面夹角为109.5°的孪晶,则使得共晶硅垂直于{111}晶面方向的生长也按照TPRE机制进行;共生成对孪晶大大加快了共晶硅垂直于{111}晶面方向的生长,并大大降低{111}晶面厚度方向的生长速度与平行于{111}晶面的生长速度的差异,从根本上改变了共晶硅生长时的各向异性特点,使得共晶硅以各向同性方式生长,最终长成纤维状.
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