在SiC纤维表面利用直流磁控溅射PVD(Physical Vapor Deposition)技术沉积钛合金是制备钛基复合材料的重要工艺过程.研究了直流磁控PVD技术在SiC纤维表面沉积钛合金工艺中,靶基距对涂层厚度分布,结构演变,薄膜生长的影响,并通过表面轮廓仪,XRD(X-Ray Diffraction),原子力显微镜对涂层进行表征.结果表明:随着靶基距的减小,涂层均匀性降低,沉积率增加,能量增高,生长模式由V型柱状晶变为等轴柱状晶;柱状晶由多个纳米柱状晶合并形成.
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