通过直流磁控溅射法在硅/二氧化硅基底上沉积了Ta膜,Ta/NiFe双层膜和IrMn顶钉扎自旋阀薄膜,研究了Ta、Ta/NiFe膜的晶格结构和表面情况,及自旋阀的磁性能,结果表明,自旋阀的磁电阻率、矫顽力和交换场等性能与Ta缓冲层厚度有密切的关系,在Ta缓冲层为3nm时自旋阀的磁电阻率(9.24%)和交换场(255×(103/4π)A/m)达到最大值,而矫顽力(2.43×(103/4π)A/m)比较小.
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