在Mo基底上,采用恒电位法从含有CuCl2、InCl3、GaCl3、H2SeO3、柠檬酸的水溶液中电沉积制备Cu(In,Ga)Se2薄膜,用HCl调节pH值为2.5,并对沉积薄膜400℃左右Ar气氛中退火20 min.对退火前后的膜进行X射线衍射,扫描电镜和能谱分析仪分析,结果表明,电沉积制备的Cu(In,Ga)Se2薄膜为黄铜矿结构,退火后,共沉积薄膜的结晶度提高,晶粒尺寸增加,Se含量减少.
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