采用三氯硅烷水解缩合法合成了含八氢基的笼形倍半硅氧烷(T8H8),并用T8H8合成了多乙烯基硅氧烷笼形倍半硅氧烷(DVS-POSS)树脂,采用Fr-IR、1H-NMR、29Si-NMR等手段对其结构进行了表征;探讨了T8H8与二乙烯基硅氧烷(DVS)的加成反应.研究表明,固化的DVS-POSS具有良好的耐热性能,T醖超过530℃;DVS-POSS树脂复合材料具有优良的介电性能,在9.75 MHz下,ε为3.02,tgδ为2.4×10-3.
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