采用SEM、EDS、XRD分析了SiB4微粉化学气相渗透(CVI)SiC后的组成和结构,并用热力学计算研究了SiB4微粉在CVI SiC过程中变化的原因.结果表明:在CVI SiC过程中SiB4微粉不发生分解,但在近表层处氧化生成SiO2和B2O3.用SiB4浆料浸渍结合CVI工艺对C/SiC基体进行自愈合改性时,难以形成均匀致密的基体.
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