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研究了多孔硅的制备条件对多孔硅冷阴极场发射特性的影响,实验表明多孔硅的制备条件如电解电流密度、电解时间等对多孔硅冷阴极的场发射特性有较大的影响。

参考文献

[1] Koshida N, Ozaki T, Sheng X, et al. Cold electron emission from electroluminescent porous silicon diode [J]. Jpn. J. Appl. Phys., Part 2, 1995, 34:L705-708.
[2] Sheng X, Koyama H, Koshida N. Improved cold electron emission characteristics of electroluminescent porous silicon diodes [J]. J. Vac. Sci. Technol., 1997, B15(5):1661-1665.
[3] Sheng X, Ozaki T, Koyama H, et al. Operation of electroluminescent porous silicon diodes as surface-emitting cold cathodes [J]. Thin Solid Film, 1997, 297:314-316.
[4] Komoda T, Honda Y, Hatai T, et al. Matrix flat-panel application of ballistic electron surface-emitting display [J]. SID 2000 Digest, 2000, 31:428-431.
[5] Jessing J R, Parker D L, Weichold M H. Porous silicon field emission cathode development [J]. J. Vac. Sci. Techno., 1996, B14(3):1899-1901.
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