InGaAlP超高亮LED是近年来发展的新型可见光LED， 具有发光效率高、 电流承受能力强及耐温性能好等特点， 应用于各种户外显示与照明装置。 本文汇集各厂家InGaAlP超高亮LED芯片， 并制成器件， 对其多种性能进行对比分析， 测试超高亮LED的发光强度与电流的关系以研究饱和电流的大小， 并进行电耐久性试验以考核超高亮LED芯片的可靠性； 简要介绍了封装工艺设计对超高亮LED性能参数的影响， 并提出超高亮LED性能及可靠性的其它要求， 为客户选用超高亮LED提供相对的依据。
Ultra bright InGaAlP LED is a new visible light LED developed in recent years, which is characterized by high luminous efficiency, large current capacity, and excellent heat resistance. It has been used in various field, such as outside displays, traffic lights, motion lights and so on. In the paper, Several kinds of functions on the devices made of InGaAlP ultra bright LED chips from various manufactories are analysed. For researching the saturated current and checking the LED chips′ reliability, the relationship between the luminous intensity and the current was tested and the operation life time was examined, respectively. In addition, the influence of package technology on LED parameters is introduced, and the other requirements for LED reliability are given.
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