在PECVD法制备a-Si∶H薄膜材料基础上, 以XeCl准分子激光烧结为手段, 对在玻璃衬底上制备多晶硅薄膜材料的工艺条件进行了探索, 利用XRD、 SEM、 Raman光谱等分析测试手段对所制备材料的结构特征进行了表征. 较高的衬底温度、合适的激光能量密度和脉冲频率, 有利于获得高质量的多晶硅薄膜.
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