低温金属单向诱导横向晶化多晶硅薄膜晶体管技术与常规的固相晶化多晶硅薄膜晶体管相比,制作工艺简单,而且提高了场效应迁移率和漏极击穿电压,降低了漏电电流,改进了器件参数空间分布的均匀性.我们使用金属单向诱导横向晶化多晶硅薄膜晶体管技术,成功地制作了有源矩阵液晶显示器和有源矩阵有机发光二极管显示器.
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