为开发出等离子显示屏用新型红色荧光体,研究了GdAl3(BO3)4∶Eu,Gd2SiO5∶Eu的紫外和真空紫外发光特性.在147nm激发下GdAl3(BO3)4∶Eu3+呈色坐标为(0.645,0.330)的强红光发射,说明是非常有前途的PDP用红色发光材料.在GdAl3(BO3)4∶Eu3+的激发光谱中,除观察到Eu3+的电荷迁移带(峰值位于258nm)外,还观察到峰值位于155nm的宽带.依据硼酸盐的吸收数据将其归属于BO3基团的吸收.另外观察到Gd3+8S7/2→6I11/2跃迁(274nm)及在真空紫外(158～160nm)激发下,Eu3+的红光发射强度随着Eu3+浓度的增加而减弱,说明BO3基团吸收的能量经Gd3+为媒介转移到Eu3+.分析Gd2SiO5∶Eu的激发光谱,得到Eu3+的电荷迁移带是峰值位于256nm的宽带,峰值位于183nm的宽带可能是Gd3+的电荷迁移带.在256nm激发下Gd2SiO5∶Eu3+呈强红光发射,但是147nm激发下很弱.这是由于真空紫外激发效率低的原因,其特点可由其晶体结构即激活离子所处的环境解释.
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