多年来,人们对多孔硅的制备方法、微结构特征及其化学成分、发光特性以及发光机制等方面做了深入的研究和探讨,文章对这几个方面的研究工作做了介绍,并对目前的研究状况和应用研究中存在的问题进行了分析.制备出均匀性好、发光效率高、性质稳定、机械强度较高的多孔硅是促进其实用化进程的基本途径.人们对多孔硅进行大量研究的目的主要在于获得硅发光集成装置,另外多孔硅的应用研究也体现在光电子器件、光学器件和传感器件3个方面.多孔硅在微电子学、晶片机械加工、生物工艺学等领域也具有潜在的应用价值.
参考文献
| [1] | Canham L T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers[J]. Appl. Phys. Lett., 1990, 57(10): 1046-1408. |
| [2] | Lim P, Brock J R, Trachtenberg I. Laser-induced etching of silicon in hydrofluoric acid[J]. Appl. Phys. Lett., 1992, 60(4): 486-488. |
| [3] | Hummel R E,Chang Sung-Sik. Novel technique for preparing porous silicon[J].Appl. Phys. Lett., 1992, 61(16): 1965-1967. |
| [4] | Chen Qianwang, Qian Yitai,Chen Zuyao, et al. Hydrothermal epitaxy of highly oriented TiO2 thin film on silicon[J]. Appl. Phys. Lett., 1995, 66 (13): 1608-1610. |
| [5] | Hou Xiao-yuan, Fan Hong-lei,Xu Lei, et al. Pulsed anodic etching: An effective method of preparing light-emitting porous silicon[J]. Appl. Phys. Lett., 1996, 68 (17): 2323-2325. |
| [6] | 周卫,福田芳雄.多孔硅层湿法腐蚀现象的研究[J].电子元件与材料,2000,19(5): 7-8. |
| [7] | Petrova-Koch V,Muschik T,Kux A, et al. Rapid-thermal-oxidized porous Si-The superior photoluminescent Si[J]. Appl. Phys. Lett., 1992,61 (8): 943-945. |
| [8] | Li Xinjian,Zhu Deliang, Chen Qianwang, et al. Strong- and nondegrading- luminescent porous silicon prepared by hydrothermal etching[J]. Appl. Phys. Lett., 1999, 74(3): 389-391. |
| [9] | 刘小兵,熊祖洪,史向华,等.经Al2O3与SiOx钝化的多孔硅及其光致发光特性[J].半导体学报,2000, 21(1):38-43. |
| [10] | 李宏建,彭景翠,颜永红,等.多孔硅的表面碳膜钝化[J].发光学报,2000,21(2):104-108. |
| [11] | Canham L T,Cullis A G,Perkering C, et al. Luminescent anodized silicon aerocrystal networks prepared by supercritical drying[J]. Nature, 1994, 368(6467): 133-135. |
| [12] | Borghesi A, Sallella A,Pivac B, et al. Characterization of porous silicon inhomogenieties by high spatial resolution infrared spectroscopy[J]. Solid State Commun., 1993, 87(1): 1-4. |
| [13] | Hadj Zoubir N,Vergnat M,Delatour T, et al. Interpretation of the luminescence quenching in chemically etched porous silicon by the desorption of SiH3 species[J].Appl.Phys.Lett., 1994,65(1): 82-84. |
| [14] | Banerjiee S,Narasimhan K L,Sardesai A. Role of hydrogen- and oxygen-terminated surfaces in the luminescence of porous silicon[J]. Phys. Rev. B, 1994, 49(4): 2915-2918. |
| [15] | Bisi O,Ossicini Stefano. Porous silicon: a quantum sponge structure for silicon based optoelectronics[J].Surface Science Reports, 2000, 38:1-126. |
| [16] | Cullis A G,Canham L T,Calcott P D J. The structural and luminescence properties of porous silicon[J].J. Appl. Phys., 1997, 82(3): 909-965. |
| [17] | 鲍希茂.发光多孔硅[J].物理学进展,1993, 13(1):280-290. |
| [18] | 李清山,马玉蓉,方容川.多孔硅发光峰温度行为的研究[J].发光学报,1999, 20(3):265-269. |
| [19] | Xu Z Y, Gal M, Gross M. Photoluminescence studies on porous silicon[J]. Appl. Phys. Lett., 1992,60(11): 1375-1377. |
| [20] | Zheng X L,Wang W,Chen H C. Anomalous temperature dependencies of photoluminescence for visible-light-emitting porous Si[J]. Appl. Phys. Lett., 1992, 60(18): 986-988. |
| [21] | Fang Rongchuan, Li Qingshan,Cui Jingbiao, Temperature dependence of photoluminescence in porous silicon[J]. Chin. Phys. Lett., 1992, 9(8): 438-440. |
| [22] | Maruska H P,Fereydoon N,Kalkhoran N M.Energy bands in quantum confined silicon light emitting diodes[J]. Appl. Phys. Lett., 1993, 63(1): 45-47. |
| [23] | Tsai C, Li K -H,Kinosky D S, et al.Correlation between silicon hydride species and the photoluminescence intensity of porous silicon[J]. Appl. Phys. Lett., 1992, 60(14): 1700-1702. |
| [24] | Prokes S M,Glembocki O J, Bermudez V M,et al. SiHx excitation: An alternate mechanism for porous Si photoluminescence[J].Phys. Rev. B, 1992, 45(23): 13788-13791. |
| [25] | Robison M B,Dillon A C,Haynes D R, et al. Effect of thermal annealing and surface coverage on porous silicon photoluminescence[J]. Appl. Phys. Lett.,1992, 61(12): 1414-1417. |
| [26] | 汪开源,唐洁影.多孔硅发光机制的分析[J].固体电子学研究与进展, 1994, 14(4):317-322. |
| [27] | 秦国刚,贾永强.多孔硅发强可见光的新物理模型[J].半导体学报,1993, 14(10):648-651. |
| [28] | 刘小兵,史向华.多孔硅表面的Al2O3钝化处理[J].半导体光电,2001, 22(4):285-288. |
| [29] | Yamana M,Kashiwazaki N,Kinoshita A, et al. Porous silicon oxide layer formation by the electrochemical treatment of a porous silicon layer[J] J. Electrochem. Soc., 1990, 137(9): 2925-2927. |
| [30] | Diener J,Künzner N,Kovalev D, et al. Dichronic Bragg reflectors based on birefringent porous silicon[J].Appl. Phys. Lett., 2001,78(24): 3887-3889. |
| [31] | Chen Q W,Zhu D L,Zhu C, et al. A way to obtain visible blue light emission in porous silicon[J]. Appl. Phys. Lett., 2003, 82(7): 1018-1020. |
| [32] | 李鹏,李清山,马玉蓉,等.多孔硅激光染料镶嵌膜的荧光光谱研究[J].光谱学与光谱分析, 1997, 17(2):31-34. |
| [33] | Sen S,Siejka J,Savtchouk A, et al. Spin-on doping of porous silicon and its effect on photoluminescence and transport characteristics[J]. Appl. Phys. Lett., 1997, 70(17): 2253-2255. |
| [34] | Tada K,Harada H,Yoshino K. Field-effect mobility of molecularly doped poly (3-hexylthiophene)[J]. Jpn. J. Appl. Phys., 1997, 36(6A): L718-L720. |
| [35] | Balucani M,La Monica S,Ferrari A. 200MHz optical signal modulation from a silicon light emitting device[J]. Appl. Phys. Lett., 1998, 72(6): 639-640. |
| [36] | 丁邦建,王维彪.多孔硅场致电子发射[J].液晶与显示,2000,16(4):268-272. |
| [37] | Araki M, Koyama H, Koshide N. Controlled electroluminescence spectra of porous silicon diodes with a vertical optical cavity[J]. Appl. Phys.Lett., 1996, 69(20): 2956-2958. |
| [38] | Hirschman K D,Tsyheskov L,Duttagupta S P, et al. Silicon-based light emitting devices integrated into microelectronic circuits[J].Nature, 1996,384:336-338. |
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