采用光致发光方法研究了采用金属有机化学气相沉积(MOCVD)在蓝宝石衬底上生长的掺硅InGaN和掺硅GaN材料的光学性质.在室温下,InGaN材料带边峰位置为437.0 nm,半高宽为14.3 nm;GaN材料带边峰位置为363.4 nm,半高宽为9.5 nm.进行变温测量发现,随温度的升高,两种材料的发光强度降低,半高宽增大;GaN材料的带边峰值能量位置出现红移现象,与Varshini公式符合较好;InGaN材料的带边峰值能量位置则出现红移-蓝移-红移现象,这与InGaN材料的局域态、热效应以及由于电子-空穴对的形成而造成的无序程度增加有关,对大于140 K的峰值能量位置的红移用Varshini公式拟合,符合较好.
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